An image sensor is provided. The image sensor includes a semiconductor substrate having a sensing region and a non-sensing region; a passivation layer formed on the semiconductor substrate; a first planar layer formed on the passivation layer; a color filter layer formed on the first planar layer with respect to the sensing region and a shielding layer formed on the first planar layer with respect to the non-sensing region; a plurality of micro-lens layers formed on the color filter layer and on the shielding layer; and a plurality of cap oxide layers formed on the micro-lens layer.
1. An image sensor, comprising:
a semiconductor substrate ( 310 ) comprising a sensing region ( 311 ) and a non-sensing region ( 312 );
a passivation layer ( 320 ) formed on said semiconductor substrate ( 310 );
a first planar layer ( 330 ) formed on said passivation layer ( 320 );
a color filter layer ( 340 ) formed on said first planar layer ( 330 ) with respect to said sensing region ( 311 ) and a shielding layer ( 350 ) formed on said first planar layer ( 330 ) with respect to said non-sensing region ( 312 );
a second planar layer ( 360 ) formed on said color filter layer ( 340 ) and on said shielding layer ( 350 );
a plurality of micro-lens layers ( 370 )( 470 ) formed on said color filter layer ( 340 ) and on said shielding layer ( 350 ); and
a plurality of cap oxide layers ( 380 )( 480 ) formed on said micro-lens layers ( 370 )( 470 ).
2. The image sensor of claim 1 , wherein said color filter layer ( 340 ) comprises a plurality of red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas ( 341 , 342 , 343 ).
3. The image sensor of claim 2 , wherein said micro-lens layers ( 370 )( 470 ) comprise photoresist.
4. The image sensor of claim 3 , wherein each of said micro-lens layers ( 370 )( 470 ) on said color filter layer ( 340 ) is divided by photolithography into a plurality of first micro-lenses ( 371 )( 471 ), each of said plurality of first micro-lenses ( 371 )( 471 ) corresponding to one of said plurality of sub-pixel areas ( 341 , 342 , 343 ).
5. The image sensor of claim 3 , wherein each of said micro-lens layers ( 370 )( 470 ) on said shielding layer ( 350 ) is divided by photolithography into a plurality of second micro-lenses ( 372 )( 472 ), each of said plurality of second micro-lenses ( 372 )( 472 ) has a size larger than or equal to each of said plurality of sub-pixel areas ( 341 , 342 , 343 ).
6. The image sensor of claim 1 , wherein said first planar layer ( 330 ) comprises photoresist.
7. The image sensor of claim 1 , wherein said second planar layer ( 360 ) comprises photoresist.
8. An image sensor, comprising:
a semiconductor substrate ( 310 ) comprising a sensing region ( 311 ) and a non-sensing region ( 312 );
a passivation layer ( 320 ) formed on said semiconductor substrate ( 310 );
a first planar layer ( 330 ) formed on said passivation layer ( 320 );
a color filter layer ( 340 ) formed on said first planar layer ( 330 ) with respect to said sensing region ( 311 ) and a shielding layer ( 350 ) formed on said first planar layer ( 330 ) with respect to said non-sensing region ( 312 );
a plurality of micro-lens layers ( 370 )( 470 ) comprising a plurality of first micro-lenses ( 371 )( 471 ) formed on said color filter layer ( 340 ) and a plurality of second micro-lenses ( 372 )( 472 ) formed on said shielding layer ( 350 ); and
a plurality of cap oxide layers ( 380 )( 480 ) formed on said plurality of first micro-lenses ( 371 )( 471 ) and on said plurality of second micro-lenses ( 372 )( 472 ).
9. The image sensor of claim 8 , wherein said color filter layer ( 340 ) comprises a plurality of red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas ( 341 , 342 , 343 ).
10. The image sensor of claim 9 , wherein each of said plurality of first micro-lenses ( 371 )( 471 ) corresponds to one of said plurality of sub-pixel areas ( 341 , 342 , 343 ).
11. The image sensor of claim 10 , wherein each of said plurality of first micro-lenses ( 371 )( 471 ) and each of said plurality of second micro-lenses ( 372 )( 472 ) have the same size.
12. The image sensor of claim 10 , wherein each of said plurality of first micro-lenses ( 371 )( 471 ) and each of said plurality of second micro-lenses ( 372 )( 472 ) have different sizes.
13. The image sensor of claim 10 , wherein each of said plurality of first micro-lenses ( 371 )( 471 ) and each of said plurality of second micro-lenses ( 372 )( 472 ) have the same curvature.
14. The image sensor of claim 10 , wherein each of said plurality of first micro-lenses ( 371 )( 471 ) and each of said plurality of second micro-lenses ( 372 )( 472 ) have different curvatures.
15. The image sensor of claim 8 , wherein said first planar layer ( 330 ) comprises photoresist.
16. The image sensor of claim 8 , further comprising a second planar layer ( 360 ) formed on said color filter layer ( 340 ) and on said shielding layer ( 350 ) prior to the formation of said micro-lens layer ( 370 )( 470 ).
17. The image sensor of claim 16 , wherein said second planar layer ( 360 ) comprises photoresist.