Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

1. A method of manufacturing a semiconductor device, the method comprising:

forming a film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:

supplying a raw material gas to a substrate in a process chamber;

exhausting the raw material gas remaining in the process chamber through an exhaust line in a state where the supply of the raw material gas is being stopped;

supplying a first reaction gas consisting of carbon, nitrogen and hydrogen to the substrate in the process chamber after exhausting the raw material gas and in the state where the supply of the raw material gas is being stopped;

exhausting the first reaction gas remaining in the process chamber through the exhaust line in a state where the supply of the first reaction gas is being stopped;

supplying a second reaction gas different from the first reaction gas to the substrate in the process chamber; and

exhausting the second reaction gas remaining in the process chamber through the exhaust line in a state where the supply of the second reaction gas is being stopped,

wherein the act of exhausting the first reaction gas remaining in the process chamber comprises:

exhausting at least a portion of the first reaction gas remaining in the process chamber by opening a valve to a degree of valve opening as a first degree of valve opening, while the first degree of valve opening is maintained to gradually exhaust the first reaction gas for a first predetermined period of time until a concentration of the first reaction gas reaches a predetermined concentration at which no significant reaction between the raw material gas remaining in the exhaust line and the first reaction gas exhausted through the exhaust line occurs; and

exhausting a residual of the first reaction gas remaining in the process chamber, after the concentration of the first reaction gas reaches the predetermined concentration, by opening the valve to a degree of valve opening as a second degree of valve opening which is higher than the first degree of valve opening, while the second degree of valve opening is maintained for a second predetermined period of time to exhaust all of the first reaction gas at the predetermined concentration at once.

2. The method of claim 1 , wherein the second degree of valve opening is fully-opened.

3. The method of claim 1 , wherein the act of exhausting the first reaction gas remaining in the process chamber comprises continuously supplying an inert gas into the process chamber.

4. The method of claim 1 , wherein the raw material gas contains a halogen element.

5. The method of claim 1 , wherein the raw material gas contains a chlorine element or a fluorine element.

6. The method of claim 1 , wherein the raw material gas contains a chlorine element.

7. The method of claim 1 , wherein the first reaction gas contains amine.

8. The method of claim 1 , wherein the first reaction gas contains at least one amine selected from a group consisting of ethylamine, methylamine, propylamine, isopropylamine, butylamine and isobutylamine.

9. The method of claim 1 , wherein the first reaction gas contains at least one amine selected from a group consisting of triethylamine, diethylamine, monoethylamine, trimethylamine, dimethylamine, monomethylamine, tripropylamine, dipropylamine, monopropylamine, triisopropylamine, diisopropylamine, monoisopropylamine, tributylamine, dibutylamine, monobutylamine, triisobutylamine, diisobutylamine and monoisobutylamine.

10. The method of claim 1 , wherein the act of exhausting the first reaction gas remaining in the process chamber comprises changing a set internal pressure of the process chamber in multiple steps.

11. The method of claim 10 , wherein the act of exhausting the first reaction gas remaining in the process chamber comprises:

exhausting the first reaction gas remaining in the process chamber with the set internal pressure of the process chamber as a first set internal pressure; and

exhausting the first reaction gas remaining in the process chamber with the set internal pressure of the process chamber as a second set internal pressure which is lower than the first set internal pressure.

12. The method of claim 11 , wherein the act of exhausting the first reaction gas remaining in the process chamber with the set internal pressure of the process chamber as the second set internal pressure comprises exhausting the first reaction gas with the maximum exhaustion capability of the exhaustion line.

13. The method of claim 1 , wherein the act of exhausting the first reaction gas remaining in the process chamber comprises changing the exhaustion capability of the exhaustion line in multiple steps.

14. The method of claim 13 , wherein the act of exhausting the first reaction gas remaining in the process chamber comprises:

exhausting the first reaction gas remaining in the process chamber with the exhaustion capability of the exhaustion line as a first exhaustion capability; and

exhausting the first reaction gas remaining in the process chamber with the exhaustion capability of the exhaustion line as a second exhaustion capability which is higher than the first exhaustion capability.

15. The method of claim 14 , wherein the act of exhausting the first reaction gas remaining in the process chamber with the exhaustion capability of the exhaustion line as a second exhaustion capability comprises exhausting the first reaction gas with the maximum exhaustion capability of the exhaustion line.

16. The method of claim 1 , wherein the second reaction gas contains at least one gas selected from a group consisting of oxygen-containing gas and nitrogen-containing gas.

17. A substrate processing apparatus comprising:

a process chamber configured to accommodate a substrate;

a raw material gas supply system configured to supply a raw material gas to the substrate in the process chamber;

a first reaction gas supply system configured to supply a first reaction gas consisting of carbon, nitrogen and hydrogen to the substrate in the process chamber;

a second reaction gas supply system configured to supply a second reaction gas different from the first reaction gas to the substrate in the process chamber;

an exhaustion line configured to exhaust the interior of the process chamber;

an exhaustion valve disposed in the exhaustion line; and

a controller configured to control the raw material gas supply system, the first reaction gas supply system, the second reaction gas supply system, the exhaustion line and the exhaustion valve such that a film is formed on the substrate by performing a cycle a predetermined number of times, the cycle comprising:

supplying the raw material gas to the substrate in the process chamber;

exhausting the raw material gas remaining in the process chamber through an exhaustion line in a state where the supply of the raw material gas is being stopped;

supplying the first reaction gas to the substrate in the process chamber after exhausting the raw material gas and in the state where the supply of the raw material gas is being stopped;

exhausting the first reaction gas remaining in the process chamber through the exhaustion line in a state where the supply of the first reaction gas is being stopped;

supplying the second reaction gas to the substrate in the process chamber; and

exhausting the second reaction gas remaining in the process chamber through the exhaustion line in a state where the supply of the second reaction gas is being stopped,

wherein the act of exhausting the first reaction gas remaining in the process chamber comprises:

exhausting at least a portion of the first reaction gas remaining in the process chamber by opening a valve to a degree of valve opening as a first degree of valve opening, while the first degree of valve opening is maintained to gradually exhaust the first reaction gas for a first predetermined period of time until a concentration of the first reaction gas reaches a predetermined concentration at which no significant reaction between the raw material gas remaining in the exhaust line and the first reaction gas exhausted through the exhaust line occurs; and

exhausting a residual of the first reaction gas remaining in the process chamber, after the concentration of the first reaction gas reaches the predetermined concentration, by opening the valve to a degree of valve opening as a second degree of valve opening which is higher than the first degree of valve opening, while the second degree of valve opening is maintained for a second predetermined period of time to exhaust all of the first reaction gas at the predetermined concentration at once.

18. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a method of manufacturing a semiconductor device, the method comprising:

forming a film on a substrate by performing a cycle comprising:

supplying a raw material gas to a substrate in a process chamber;

exhausting the raw material gas remaining in the process chamber through an exhaustion line in a state where the supply of the raw material gas is being stopped;

supplying a first reaction gas consisting of carbon, nitrogen and hydrogen to the substrate in the process chamber after exhausting the raw material gas and in the state where the supply of the raw material gas is being stopped;

exhausting the first reaction gas remaining in the process chamber through the exhaust line in a state where the supply of the first reaction gas is being stopped;

supplying a second reaction gas different from the first reaction gas to the substrate in the process chamber; and

exhausting the second reaction gas remaining in the process chamber through the exhaust line in a state where the supply of the second reaction gas is being stopped,

wherein the act of exhausting the first reaction gas remaining in the process chamber comprises:

exhausting at least a portion of the first reaction gas remaining in the process chamber by opening a valve to a degree of valve opening as a first degree of valve opening, while the first degree of valve opening is maintained to gradually exhaust the first reaction gas for a first predetermined period of time until a concentration of the first reaction gas reaches a predetermined concentration at which no significant reaction between the raw material gas remaining in the exhaust line and the first reaction gas exhausted through the exhaust line occurs; and

exhausting a residual of the first reaction gas remaining in the process chamber, after the concentration of the first reaction gas reaches the predetermined concentration, by opening the valve to a degree of valve opening as a second degree of valve opening which is higher than the first degree of valve opening, while the second degree of valve opening is maintained for a second predetermined period of time to exhaust all of the first reaction gas at the predetermined concentration at once.