Solid state lighting devices with accessible electrodes and methods of manufacturing
Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
1. A light emitting die, comprising:
a first semiconductor material having a first surface;
a second semiconductor material having a second surface facing away from the first surface of the first semiconductor material;
an active region between the first and second semiconductor materials, wherein the first semiconductor material, the active region, and the second semiconductor material together have a stack thickness equal to a distance between the first and second surfaces;
a first electrode in contact with the first surface of the first semiconductor material;
a second electrode in contact with the second surface of the second semiconductor material, the second electrode being spaced apart from the first electrode by at least the stack thickness; and
wherein a portion of the second electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material.
2. The light emitting die of claim 1 wherein both the first electrode and the second electrode are accessible from the same side of the light emitting die.
3. The light emitting die of claim 1 wherein:
the second electrode includes a first portion and a second portion extending from the first portion;
the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material; and
the second portion of the second electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material.
4. The light emitting die of claim 1 wherein:
the second electrode includes a first portion and a second portion extending from the first portion;
the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material; and
the second portion of the second electrode laterally extends beyond the second semiconductor material, the active region, and the first semiconductor material.
5. The light emitting die of claim 1 wherein:
the second electrode includes a first portion and a second portion extending from the first portion;
the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material;
the second portion of the second electrode includes a plurality of individual sections spaced apart from one another; and
the individual sections of the second portion laterally extend beyond the first semiconductor material, the active region, and the second semiconductor material.
6. The light emitting die of claim 1 wherein the exposed portion of the second electrode forms a connection site configured to directly connect to external components.
7. The light emitting die of claim 1 wherein the second electrode has a connection site that is vertically aligned with the second surface of the second semiconductor material.
8. The light emitting die of claim 1 , further including a substrate, wherein the first semiconductor material is between the substrate and the first electrode.
9. The light emitting die of claim 1 , further including a conductive substrate, wherein the first semiconductor material is between the conductive substrate and the first electrode.
10. The light emitting die of claim 1 , further including a substrate and an insulating material on the substrate, wherein the insulating material is between the substrate and the second semiconductor material.
11. The light emitting die of claim 1 , further including a reflective material adjacent the second surface of the second semiconductor material.
12. The light emitting die of claim 1 , further including a substrate and a reflective material between the substrate and the second semiconductor material.