Semiconductor device with high breakdown voltage and manufacture thereof
View Patent ↗A semiconductor device includes: first and second n-type wells formed in p-type semiconductor substrate, the second n-type well being deeper than the first n-type well; first and second p-type backgate regions formed in the first and second n-type wells; first and second n-type source regions formed in the first and second p-type backgate regions; first and second n-type drain regions formed in the first and second n-type wells, at positions opposed to the first and second n-type source regions, sandwiching the first and the second p-type backgate regions; and field insulation films formed on the substrate, at positions between the first and second p-type backgate regions and the first and second n-type drain regions; whereby first transistor is formed in the first n-type well, and second transistor is formed in the second n-type well with a higher reverse voltage durability than the first transistor.
1. A method of manufacturing a semiconductor device comprising:
forming a first n-type well by ion implantation of an n-type impurity into a p-type semiconductor substrate;
forming a first isolation film and a second first isolation film in the p-type semiconductor substrate;
forming a second n-type well by ion-implantation of an n-type impurity in the p-type semiconductor substrate, the second n-type well being shallower than the first n-type well;
forming a first p-type backgate region in the first n-type well and a second p-type backgate region in the second n-type well by ion-implantation of a p-type impurity;
forming a first gate electrode that extends from above the first p-type backgate region onto the first isolation film, and forming a second gate electrode that extends from above the second p-type backgate region onto the second isolation film;
forming a first n-type source region in the first p-type backgate region and a second n-type source region in the second p-type backgate region by ion-implantation of an n-type impurity; and
forming a first n-type drain region in the first n-type well at position that is on opposite side to the first n-type source region with respect to the first p-type backgate region and the first isolation film, and forming a second n-type drain region in the second n-type well at position that is on opposite side to the second n-type source region with respect to the second p-type backgate region and the second isolation film by ion-implantation of an n-type impurity.
2. The method of manufacturing a semiconductor device as defined in claim 1 , wherein the first isolation film and the second isolation film are formed by forming a first trench and a second trench in the p-type semiconductor substrate, and depositing a first insulation film in the first trench and a second insulation film in the second trench.
3. The method of manufacturing a semiconductor device as defined in claim 1 , wherein the ion implantation for forming the first p-type backgate region and the ion implantation for forming the second p-type backgate region are performed by ion implantations of different conditions.
4. The method of manufacturing a semiconductor device as defined in claim 1 , wherein:
in forming the first n-type well, a third n-type well is formed in the p-type semiconductor substrate;
in forming the first p-type backgate region, a first p-type anode region is formed in the third n-type well; and
in forming the first n-type source region and the second n-type source region, a first n-type cathode region is formed in the first p-type anode region, thereby forming a first Zener diode.
5. The method of manufacturing a semiconductor device as defined in claim 1 , wherein:
in forming of the second n-type well, a fourth n-type well is formed in the p-type semiconductor substrate;
in forming of the second p-type backgate region, a second p-type anode region is formed in the fourth n-type well; and
in forming of the first n-type source region and the second n-type source region, a second n-type cathode region is formed in the second p-type anode region, thereby forming a second Zener diode.