Light-emitting device package and method of manufacturing thereof
The present invention provides a light-emitting diode (LED) package including: a substrate on which a set of bonding pads are formed; an LED element configured to provide light of a predetermined wavelength region, having a set of chip pads formed on a top surface thereof and being attached on a top surface of the substrate; a set of gold wires connecting the bonding pads of the substrate with the chip pads of the LED element; a phosphor layer formed in a cap shape having side and top portions of a uniform thickness and being configured to surround sides and a top surface of the LED element while being spaced apart therefrom; and a filler disposed to fill a space formed between the phosphor layer and the LED element, wherein the LED element, the gold wires, and the bonding pads of the substrate are under the phosphor layer cap.
1. A light-emitting diode (LED) package comprising:
a substrate on which a set of bonding pads are formed;
a light-emitting diode element configured to provide light of a wavelength of a predetermined region, having a set of chip pads formed on a top surface thereof and being attached on a top surface of the substrate;
a set of gold wires, each connecting a bonding pad of the set of bonding pads with one chip pad of the set of chip pads of the light-emitting diode element;
a phosphor layer formed in a shape of a cap having side and top portions of a uniform thickness and being configured to surround side surfaces and a top surface of the light-emitting diode element while being spaced apart therefrom; and
a filler disposed to fill a space formed between the phosphor layer and the light-emitting diode element,
wherein the light-emitting diode element, the set of gold wires, and the set of bonding pads of the substrate are under the phosphor layer cap.
2. The LED package according to claim 1 , wherein the phosphor layer is formed of phosphor and silicon.
3. The LED package according to claim 1 , wherein the filler is formed of silicon.
4. The LED package according to claim 1 , wherein a distance between the top surface of the light-emitting diode and the phosphor layer is between approximately 10 μm and 500 μm.
5. The LED package according to claim 1 , wherein a distance between the side surface of the light-emitting diode and the phosphor layer is between approximately 10 μm and 1,000 μm.
6. The LED package according to claim 1 , wherein the uniform thickness of the phosphor layer is between approximately 20 μm and 200 μm.
7. A method of manufacturing a light-emitting diode package, the method comprising:
mounting a light-emitting diode element on a substrate on which a set of bonding pads are formed, the light-emitting diode element being configured to provide light of a wavelength of a predetermined region and having a set of chip pads formed on a top surface thereof;
wire-bonding each of the set of bonding pads of the substrate to one of the set of chip pads of the light-emitting diode element using gold wires;
dotting a filler in a liquid phase on a top of the light-emitting diode element;
arranging a phosphor layer formed in a shape of a cap, and having side and top portions of a uniform thickness, configured to surround the top of the light-emitting diode element on which the filler is dotted while being spaced apart therefrom; and
baking the light-emitting diode element mounted on the substrate, the phosphor layer surrounding the gold wires, the set of bonding pads, and the filler,
wherein the light-emitting diode element, the gold wires and the set of bonding pads of the substrate are arranged under the phosphor layer cap.
8. The method according to claim 7 , wherein the phosphor layer is formed of phosphor and silicon.
9. The method according to claim 7 , wherein the filler in a liquid phase is silicon.
10. The method according to claim 7 , wherein a distance between the top surface of the light-emitting diode and the phosphor layer is between approximately 10 μm and 500 μm.
11. The method according to claim 7 , wherein a distance between the side surface of the light-emitting diode and the phosphor layer is between approximately 10 μm and 1,000 μm.
12. The method according to claim 7 , wherein the uniform thickness of the phosphor layer is between approximately 20 μm and 200 μm.