Methods of forming memory cells having regions containing one or both of carbon and boron
Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.
1. A method of forming a memory cell, comprising:
forming an intermediate material over and directly against a first electrode, the intermediate material comprising stabilizing species corresponding to one or both of carbon and boron;
forming a switching material over and directly against the intermediate material;
forming an ion reservoir material over the switching material;
forming a second electrode over the ion reservoir material; and
wherein the intermediate material comprises a thickness within a range of from greater than 0 angstroms to less than or equal to about 50 angstroms.
2. A method of forming a memory cell, comprising:
forming an intermediate material over and directly against a first electrode, the intermediate material comprising stabilizing species corresponding to one or both of carbon and boron;
forming a switching material over and directly against the intermediate material;
forming an ion reservoir material over the switching material;
forming a second electrode over the ion reservoir material; and
wherein the intermediate material comprise a bottom surface directly against the first electrode, and an upper surface above the bottom surface; and wherein the upper surface comprises a total concentration of said stabilizing species of from about 15 atomic percent to about 100 atomic percent.
3. The method of claim 2 wherein the upper surface comprises a total concentration of said stabilizing species of from about 90 atomic percent to about 100 atomic percent.
4. A method of forming a memory cell, comprising:
forming an intermediate material over and directly against a first electrode, the intermediate material comprising stabilizing species corresponding to one or both of carbon and boron;
forming a switching material over and directly against the intermediate material;
forming an ion reservoir material over the switching material;
forming a second electrode over the ion reservoir material; and
wherein the intermediate material is formed utilizing plasma doping of the stabilizing species.
5. The method of claim 4 wherein the intermediate material comprises a gradient of stabilizing species concentration, with said concentration being lowest at a bottom surface of the intermediate material directly adjacent the first electrode and being highest at an upper surface of the intermediate material.
6. The method of claim 5 wherein the upper surface of the intermediate material comprises a total concentration of said stabilizing species of from about 15 atomic percent to about 100 atomic percent.
7. The method of claim 5 wherein the upper surface of the intermediate material comprises a total concentration of said stabilizing species of from about 90 atomic percent to about 100 atomic percent.
8. The method of claim 4 wherein the intermediate material comprises carbon.
9. The method of claim 4 wherein the intermediate material comprises boron.
10. The method of claim 4 wherein the intermediate material comprises carbon and boron.
11. A method of forming a memory cell, comprising:
forming an intermediate material over and directly against a first electrode, the intermediate material comprising carbon and boron as stabilizing species;
forming a switching material over and directly against the intermediate material;
forming an ion reservoir material over the switching material;
forming a second electrode over the ion reservoir material;
wherein the intermediate material comprises a gradient of stabilizing species concentration, with said concentration being lowest at a bottom surface of the intermediate material directly adjacent the first electrode and being highest at an upper surface of the intermediate material; and
wherein the upper surface of the intermediate material comprises a total concentration of said stabilizing species of from about 15 atomic percent to about 100 atomic percent.