IP Library Granted Patent US 9,196,813
Granted Patent B2
US 9,196,813 · App. 14/620,425 · Granted Nov 24, 2015

Light-emitting device and method for manufacturing the same

Inventor: Akihiro Chida (Isehara, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L33/62H01L27/1214H01L27/1266H01L27/3276H01L33/20H01L33/483H01L51/003H01L51/0024H01L51/0097H01L51/5203H01L51/56H01L2224/4847H01L2227/323H01L2227/326H01L2251/5338H01L2924/0002
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Quick Facts
Patent No.
US 9,196,813
App. No.
14/620,425
Granted
Nov 24, 2015
Kind
B2
Abstract

A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

Claims (45)

1. A method for manufacturing a light-emitting device, comprising the steps of:

forming a terminal electrode and a light-emitting element comprising an EL layer over a substrate, wherein a first layer comprising an organic compound contained in the EL layer is provided over the terminal electrode;

forming a first substrate having a first opening over the light-emitting element and the terminal electrode with a bonding layer having a second opening interposed therebetween, wherein the terminal electrode, the first layer, the first opening, and the second opening are overlapped with each other;

exposing a part of the terminal electrode by removing the first layer with an organic solvent;

forming an anisotropic conductive connection layer in the first opening and the second opening; and

forming an external electrode electrically connected to the terminal electrode through the anisotropic conductive connection layer.

2. The method for manufacturing a light-emitting device, according to claim 1 , wherein the first substrate is a flexible substrate.

3. The method for manufacturing a light-emitting device, according to claim 1 , wherein the organic solvent is an ethyl alcohol.

4. The method for manufacturing a light-emitting device, according to claim 1 , wherein the EL layer comprises a light-emitting layer.

5. The method for manufacturing a light-emitting device, according to claim 1 , wherein the organic compound is a light-emitting substance.

6. The method for manufacturing a light-emitting device, according to claim 1 , wherein the terminal electrode comprises a three-layer metal film in which aluminum is interposed between two layers of molybdenum.

7. A method for manufacturing a light-emitting device, comprising the steps of:

forming a separation layer over a substrate;

forming a base layer over the separation layer;

forming a terminal electrode and a light-emitting element comprising an EL layer over the base layer, wherein a first layer comprising an organic compound contained in the EL layer is provided over the terminal electrode;

forming a first substrate having a first opening over the light-emitting element and the terminal electrode with a bonding layer having a second opening interposed therebetween, wherein the terminal electrode, the first layer, the first opening, and the second opening are overlapped with each other;

exposing a part of the terminal electrode by removing the first layer with an organic solvent;

forming an anisotropic conductive connection layer in the first opening and the second opening; and

forming an external electrode electrically connected to the terminal electrode through the anisotropic conductive connection layer.

8. The method for manufacturing a light-emitting device, according to claim 7 , wherein the first substrate is a flexible substrate.

9. The method for manufacturing a light-emitting device, according to claim 7 , wherein the organic solvent is an ethyl alcohol.

10. The method for manufacturing a light-emitting device, according to claim 7 , wherein the EL layer comprises a light-emitting layer.

11. The method for manufacturing a light-emitting device, according to claim 7 , wherein the organic compound is a light-emitting substance.

12. The method for manufacturing a light-emitting device, according to claim 7 , wherein the terminal electrode comprises a three-layer metal film in which aluminum is interposed between two layers of molybdenum.

13. The method for manufacturing a light-emitting device, according to claim 7 , wherein the separation layer comprises tungsten.

14. The method for manufacturing a light-emitting device, according to claim 7 , wherein the base layer is formed of silicon oxide.

15. A method for manufacturing a light-emitting device, comprising the steps of:

forming a separation layer over a substrate;

forming a base layer over the separation layer;

forming a terminal electrode over the base layer;

forming a first electrode electrically connected to the terminal electrode;

forming an EL layer comprising an organic compound over the first electrode;

forming a first layer comprising the organic compound overlapping the terminal electrode, the EL layer and the first layer being formed simultaneously;

forming a second electrode comprising a metal element over the EL layer;

forming a first substrate having a first opening over the second electrode and the terminal electrode with a bonding layer having a second opening interposed therebetween, wherein the terminal electrode, the first layer, the first opening, and the second opening are overlapped with each other;

exposing a part of the terminal electrode by removing the first layer with an organic solvent;

forming an anisotropic conductive connection layer in the first opening and the second opening; and

forming an external electrode electrically connected to the terminal electrode through the anisotropic conductive connection layer.

16. The method for manufacturing a light-emitting device, according to claim 15 , wherein the first substrate is a flexible substrate.

17. The method for manufacturing a light-emitting device, according to claim 15 , wherein the organic solvent is an ethyl alcohol.

18. The method for manufacturing a light-emitting device, according to claim 15 , wherein the EL layer comprises a light-emitting layer.

19. The method for manufacturing a light-emitting device, according to claim 15 , wherein the organic compound is a light-emitting substance.

20. The method for manufacturing a light-emitting device, according to claim 15 , wherein the terminal electrode comprises a three-layer metal film in which aluminum is interposed between two layers of molybdenum.

21. The method for manufacturing a light-emitting device, according to claim 15 , wherein the separation layer comprises tungsten.

22. The method for manufacturing a light-emitting device, according to claim 15 , wherein the base layer is formed of silicon oxide.

Priority Claims (3)
JP 2013-051231 · Mar 14, 2013 · national
JP 2013-093328 · Apr 26, 2013 · national
JP 2013-120369 · Jun 7, 2013 · national
Continuity (2)
Continuation 14202810 · Mar 10, 2014
Related Publication 20150162569A1 · Jun 11, 2015