Method for manufacturing semiconductor device having grooved surface
A technology for reducing contact resistance between a semiconductor substrate and an electrode is provided. A provided method for manufacturing a semiconductor device includes: forming an oxide film 62 on a surface 12 b of a semiconductor substrate 12 by bringing the surface 12 b into contact with ammonia-hydrogen peroxide water mixture; forming a groove 60 on the surface 12 b by irradiating light to heat the surface 12 b covered with the oxide film 62 ; removing the oxide film 62 to expose the surface 12 b ; and forming an electrode 16 on the exposed surface 12 b.
1. A method for manufacturing a semiconductor device, the semiconductor device comprises:
a p-type collector region of an IGBT, the p-type collector region being exposed at a surface of a semiconductor substrate;
an n-type cathode region of a diode, the n-type cathode region being exposed at the surface of the semiconductor substrate and adjacent to the p-type collector region;
an n-type buffer region, the n-type buffer region being adjacent to the p-type collector region and the n-type cathode region from a deeper side, wherein an n-type impurity concentration in the n-type buffer region is lower than that in the n-type cathode region; and
an n-type drift region, the n-type drift region being adjacent to the n-type buffer region from the deeper side, wherein an n-type impurity concentration in the n-type drift region is lower than that in the n-type buffer region,
the method comprising:
forming an oxide film on the surface of the semiconductor substrate by bringing the surface into contact with ammonia-hydrogen peroxide water mixture;
forming a groove in the surface by irradiating light to heat the surface covered with the oxide film;
removing the oxide film to expose the surface; and
forming an electrode on the exposed surface.
2. A method of claim 1 , wherein a range to which the forming of the oxide film and the heating of the surface are performed includes the surface in the p-type collector region located near a boundary between the n-type cathode region and the p-type collector region.
3. A method of claim 1 , wherein the p-type collector region is located so as to surround the n-type cathode region; and a range to which the forming of the oxide film and the heating of the surface are performed is arranged on the surface in the p-type collector region so as to surround the n-type cathode region.
4. A method of claim 1 , wherein a range to which the forming of the oxide film and the heating of the surface are performed does not include at least a part of the surface in the n-type cathode region,
the method further comprises: removing the oxide film on the part of the surface in the n-type cathode region; and
heating the part of the surface in the n-type cathode region after the removal of the oxide film on the part of the surface in the n-type cathode region, and in the forming of the electrode, the electrode is formed on the part of the surface in the heated n-type cathode region after the heating of the part of the surface in the n-type cathode region.
5. A method for manufacturing a semiconductor device, the method comprising:
forming an oxide film on a surface of a semiconductor substrate by bringing the surface into contact with ammonia-hydrogen peroxide water mixture;
forming a groove in the surface by irradiating light to heat the surface covered with the oxide film;
removing the oxide film to expose the surface after forming the groove; and
forming an electrode on the exposed surface.
6. A method of claim 5 , wherein the semiconductor device comprises:
a p-type collector region of an IGBT, the p-type collector region being exposed at the surface;
an n-type cathode region of a diode, the n-type cathode region being exposed at the surface and adjacent to the p-type collector region;
an n-type buffer region, the n-type buffer region being adjacent to the p-type collector region and the n-type cathode region from a deeper side, wherein an n-type impurity concentration in the n-type buffer region is lower than that in the n-type cathode region; and
an n-type drift region, the n-type drift region being adjacent to the n-type buffer region from the deeper side, wherein an n-type impurity concentration in the n-type drift region is lower than that in the n-type buffer region.
7. A method of claim 6 , wherein a range to which the forming of the oxide film and the heating of the surface are performed includes the surface in the p-type collector region located near a boundary between the n-type cathode region and the p-type collector region.
8. A method of claim 6 , wherein the p-type collector region is located so as to surround the n-type cathode region; and a range to which the forming of the oxide film and the heating of the surface are performed is arranged on the surface in the p-type collector region so as to surround the n-type cathode region.
9. A method of claim 6 , wherein a range to which the forming of the oxide film and the heating of the surface are performed does not include at least a part of the surface in the n-type cathode region,
the method further comprises: removing the oxide film on the part of the surface in the n-type cathode region; and
heating the part of the surface in the n-type cathode region after the removal of the oxide film on the part of the surface in the n-type cathode region, and in the forming of the electrode, the electrode is formed on the part of the surface in the heated n-type cathode region after the heating of the part of the surface in the n-type cathode region.
10. A method for manufacturing a semiconductor device, the method comprising:
forming an oxide film on a surface of a semiconductor substrate by bringing the surface into contact with ammonia-hydrogen peroxide water mixture;
forming a groove in the surface by irradiating light to melt a portion of the surface without melting the oxide film;
removing the oxide film to expose the surface; and
forming an electrode on the exposed surface.
11. A method of claim 10 , wherein the semiconductor device comprises:
a p-type collector region of an IGBT, the p-type collector region being exposed at the surface;
an n-type cathode region of a diode, the n-type cathode region being exposed at the surface and adjacent to the p-type collector region;
an n-type buffer region, the n-type buffer region being adjacent to the p-type collector region and the n-type cathode region from a deeper side, wherein an n-type impurity concentration in the n-type buffer region is lower than that in the n-type cathode region; and
an n-type drift region, the n-type drift region being adjacent to the n-type buffer region from the deeper side, wherein an n-type impurity concentration in the n-type drift region is lower than that in the n-type buffer region.
12. A method of claim 11 , wherein a range to which the forming of the oxide film and the heating of the surface are performed includes the surface in the p-type collector region located near a boundary between the n-type cathode region and the p-type collector region.
13. A method of claim 11 , wherein the p-type collector region is located so as to surround the n-type cathode region; and a range to which the forming of the oxide film and the heating of the surface are performed is arranged on the surface in the p-type collector region so as to surround the n-type cathode region.
14. A method of claim 11 , wherein a range to which the forming of the oxide film and the heating of the surface are performed does not include at least a part of the surface in the n-type cathode region,
the method further comprises: removing the oxide film on the part of the surface in the n-type cathode region; and
heating the part of the surface in the n-type cathode region after the removal of the oxide film on the part of the surface in the n-type cathode region, and in the forming of the electrode, the electrode is formed on the part of the surface in the heated n-type cathode region after the heating of the part of the surface in the n-type cathode region.