SEMICONDUCTOR DEVICE
A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.
1 . A semiconductor device, comprising:
a lead frame;
a circuit board located on the lead frame;
a power device including a switching element, the power device being mounted on the circuit board via a bump located between the power device and the circuit board; and
a heat releasing member connected to the power device.
2 . A semiconductor device according to claim 1 , wherein the circuit board is a multi-layer wiring board.
3 . A semiconductor device according to claim 1 , wherein the circuit board includes a capacitor element, a resistor element, an inductor element, a diode element and a switching element.
4 . A semiconductor device according to claim 1 , wherein the circuit board includes a circuit outputting an output signal in response to an input signal, the output signal being different from the input signal.
5 . A semiconductor device according to claim 1 , wherein the heat releasing member is connected to the lead frame.
6 . A semiconductor device according to claim 1 , further comprising a sealing resin covering the lead frame, the circuit board, the power device and the heat releasing member.
7 . A semiconductor device according to claim 1 , further comprising a sealing resin covering the lead frame, the circuit board, the power device and the heat releasing member so as to expose a part of the heat releasing member;
wherein a surface of the exposed part of the heat releasing member is flush with a surface of the sealing resin.
8 . A semiconductor device according to claim 7 , wherein the surface of the exposed part of the heat releasing member has a convexed and concaved shape.
9 . A semiconductor device according to claim 7 , wherein the exposed part of the heat releasing member has a flow path formed therein.
10 . A semiconductor device according to claim 7 , wherein:
the sealing resin includes a first resin and a second resin;
the first resin is located between the circuit board and the power device; and
the second resin is located so as to cover the first resin.
11 . A semiconductor device according to claim 10 , wherein the first resin has a coefficient of thermal expansion closer to the coefficient of thermal expansion of the bump than the coefficient of thermal expansion of the second resin.
12 . A semiconductor device according to claim 10 , wherein the first resin has a heat conductivity higher than the heat conductivity of the second resin.
13 . A semiconductor device according to claim 1 , further comprising a sealing resin covering the lead frame, the circuit board, the power device and the heat releasing member so as to expose a part of the heat releasing member;
wherein a top surface and a side surface of the part of the heat releasing member are exposed.
14 . A semiconductor device according to claim 13 , wherein the top surface of the exposed part of the heat releasing member has a convexed and concaved shape.
15 . A semiconductor device according to claim 13 , wherein the exposed part of the heat releasing member includes a flow path.
16 . A semiconductor device according to claim 13 , wherein:
the sealing resin includes a first resin and a second resin;
the first resin is located between the circuit board and the power device; and
the second resin is located so as to cover the first resin.
17 . A semiconductor device according to claim 16 , wherein the first resin has a coefficient of thermal expansion closer to the coefficient of thermal expansion of the bump than the coefficient of thermal expansion of the second resin.
18 . A semiconductor device according to claim 16 , wherein the first resin has a heat conductivity higher than the heat conductivity of the second resin.
19 . A semiconductor device according to claim 1 , wherein the heat releasing member extends in a plurality of different directions from the power device, and parts of the heat releasing member extending in the plurality of different directions are connected to the lead frame.
20 . A semiconductor device according to claim 1 , wherein the heat releasing member covers at least circuits provided on the circuit board.