Composition for pattern formation, and pattern-forming method

1. A pattern-forming method comprising:

applying a composition directly or indirectly on a substrate such that a directed self-assembling film having a phase separation structure is provided directly or indirectly on the substrate, the phase separation structure comprising a plurality of phases; and

removing a part of the plurality of phases of the directed self-assembling film,

wherein the composition comprises:

a block copolymer capable of forming a phase separation structure through directed self-assembly, the block copolymer comprising:

a first block comprising a first repeating unit which comprises at least two silicon atoms; and

a second block comprising a second repeating unit which does not comprise a silicon atom; and

a solvent,

wherein a sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700,

wherein the first repeating unit is a repeating unit represented by formula (1), a repeating unit represented by formula (2-1), a repeating unit represented by formula (2-2), a repeating unit represented by formula (2-3), a repeating unit represented by formula (2-4), a repeating unit represented by formula (2-5), a repeating unit represented by formula (2-6), a repeating unit represented by formula (2-7), a repeating unit represented by formula (2-8), or a combination thereof:

wherein:

R 1 represents a hydrogen atom or a methyl group;

R 2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms;

R 3 , R 4 and R 5 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, —SiR′ 3 , —Si 2 R′ 5 or —OSiR′ 3 , or

two of R 3 , R 4 and R 5 taken together represent a ring structure having 3 to 10 ring atoms together with the silicon atom to which the two of R 3 , R 4 and R 5 bond, and the rest of R 3 , R 4 and R 5 represents a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, —SiR′ 3 , —Si 2 R′ 5 or —OSiR′ 3 ;

each R′ independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms, wherein at least one of R 3 , R 4 and R 5 represents —SiR′ 3 , —Si 2 R′ 5 or —OSiR′ 3 , and wherein a sum of the number of carbon atoms included in R 3 , R 4 and R 5 is no greater than 20;

each R 6 independently represents a hydrogen atom or a methyl group;

R 7 represents a hydrogen atom or a methyl group; and

Me represents a methyl group, and

wherein a line-and-space pattern is formed, and a molar ratio of the first repeating unit to the second repeating unit is from 35/65 to 65/35.

2. The pattern-forming method according to claim 1 , further comprising:

providing an underlayer film directly or indirectly on the substrate before applying the composition on the substrate.

3. The pattern-forming method according to claim 1 , further comprising:

forming a prepattern directly or indirectly on the substrate before applying the composition on the substrate.

4. The pattern-forming method according to claim 1 , wherein the second block is a polystyrene block comprising an unsubstituted or substituted styrene unit, or a poly(meth)acrylic acid ester block comprising a (meth)acrylic acid ester unit.

5. The pattern-forming method according to claim 1 , wherein the block copolymer is a diblock copolymer or a triblock copolymer.

6. The pattern-forming method according to claim 1 , wherein the lower limit of the number of the silicon atoms included in the first repeating unit is 3.

7. The pattern-forming method according to claim 1 , wherein the lower limit of the number of the silicon atoms included in the first repeating unit is 4.

8. The pattern-forming method according to claim 1 , wherein the upper limit of the number of the silicon atoms included in the first repeating unit is 15.

9. The pattern-forming method according to claim 1 , wherein the upper limit of the number of the silicon atoms included in the first repeating unit is 7.

10. The pattern-forming method according to claim 1 , the sum of the atomic weight of atoms constituting the first repeating unit is no greater than 450.

11. A pattern-forming method comprising:

applying a composition directly or indirectly on a substrate such that a directed self-assembling film having a phase separation structure is provided directly or indirectly on the substrate, the phase separation structure comprising a plurality of phases; and

removing a part of the plurality of phases of the directed self-assembling film,

wherein the composition comprises:

a block copolymer capable of forming a phase separation structure through directed self-assembly, the block copolymer comprising:

a first block comprising a first repeating unit which comprises at least two silicon atoms; and

a second block comprising a second repeating unit which does not comprise a silicon atom; and

a solvent,

wherein a sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700,

wherein the first repeating unit is a repeating unit represented by formula (1), a repeating unit represented by formula (2-1), a repeating unit represented by formula (2-2), a repeating unit represented by formula (2-3), a repeating unit represented by formula (2-4), a repeating unit represented by formula (2-5), a repeating unit represented by formula (2-6), a repeating unit represented by formula (2-7), a repeating unit represented by formula (2-8), or a combination thereof:

wherein:

R 1 represents a hydrogen atom or a methyl group;

R 2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms;

R 3 , R 4 and R 5 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, —SiR′ 3 , —Si 2 R′ 5 or —OSiR′ 3 , or

two of R 3 , R 4 and R 5 taken together represent a ring structure having 3 to 10 ring atoms together with the silicon atom to which the two of R 3 , R 4 and R 5 bond, and the rest of R 3 , R 4 and R 5 represents a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, —SiR′ 3 , —Si 2 R′ 5 or —OSiR′ 3 ;

each R′ independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms, wherein at least one of R 3 , R 4 and R 5 represents —SiR′ 3 , —Si 2 R′ 5 or —OSiR′ 3 , and wherein a sum of the number of carbon atoms included in R 3 , R 4 and R 5 is no greater than 20;

each R 6 independently represents a hydrogen atom or a methyl group;

R 7 represents a hydrogen atom or a methyl group; and

Me represents a methyl group, and

wherein a hole pattern is formed, and a molar ratio of the first repeating unit to the second repeating unit is from 20/80 to 80/20.

12. The pattern-forming method according to claim 11 , further comprising:

providing an underlayer film directly or indirectly on the substrate before applying the composition on the substrate.

13. The pattern-forming method according to claim 11 , further comprising:

forming a prepattern directly or indirectly on the substrate before applying the composition on the substrate.

14. The pattern-forming method according to claim 11 , wherein the second block is a polystyrene block comprising an unsubstituted or substituted styrene unit, or a poly(meth)acrylic acid ester block comprising a (meth)acrylic acid ester unit.

15. The pattern-forming method according to claim 11 , wherein the block copolymer is a diblock copolymer or a triblock copolymer.

16. The pattern-forming method according to claim 11 , wherein the lower limit of the number of the silicon atoms included in the first repeating unit is 3.

17. The pattern-forming method according to claim 11 , wherein the lower limit of the number of the silicon atoms included in the first repeating unit is 4.

18. The pattern-forming method according to claim 11 , wherein the upper limit of the number of the silicon atoms included in the first repeating unit is 15.

19. The pattern-forming method according to claim 11 , wherein the upper limit of the number of the silicon atoms included in the first repeating unit is 7.

20. The pattern-forming method according to claim 11 , the sum of the atomic weight of atoms constituting the first repeating unit is no greater than 450.