Direct connected silicon controlled rectifier (SCR) having internal trigger
In one aspect, a direct connected silicon control rectifier (DCSCR) includes a substrate having a semiconductor surface, a parasitic PNP bipolar transistor and a parasitic NPN bipolar transistor formed in the semiconductor surface. The parasitic PNP bipolar transistor includes a p+ emitter, an nbase and a pcollector and the parasitic NPN bipolar includes an n+ emitter, a pbase and an ncollector. The DCSCR also includes an electrically conductive line connecting an n+ contact to the nbase to a p+ contact to the pbase so that the nbase and the pbase are shorted.
1. A direct connected silicon control rectifier (DCSCR), comprising:
a substrate having a semiconductor surface;
at least one n-well;
a parasitic PNP bipolar transistor and parasitic NPN bipolar transistor formed in the semiconductor surface, the parasitic PNP bipolar transistor comprising a p+ emitter, an n-base and a p-collector;
a parasitic NPN bipolar transistor formed in the semiconductor surface, the parasitic NPN bipolar comprising an n+ emitter, a p-base and an n-collector; and
an electrically conductive line connecting an n+ contact of the n-base to a p+ contact of the p-base so that the n-base and the p-base are shorted,
wherein the semiconductor surface is p-type and provides the p-base, and
wherein the n-well provides the n-base.
2. The DCSCR of claim 1 , further comprising functional circuitry formed in and on the semiconductor surface; wherein the DCSCR is hooked in parallel with at least a first sub-circuit of the functional circuitry between a input/output (I/O) bond pad and a ground pad of the functional circuitry.
3. The DCSCR of claim 1 , wherein the DCSCR is coupled to an ESD detector circuit.
4. The DCSCR of claim 1 , wherein the DCSCR is coupled to a plurality of other DCSCRs in series.
5. A twin-well direct connected silicon control rectifier (DCSCR), comprising:
a substrate having a semiconductor surface;
a parasitic PNP bipolar transistor formed in the semiconductor surface, the parasitic PNP bipolar transistor comprising a p+ emitter, an n-well providing an n-base and a p-well providing a p-collector;
a parasitic NPN bipolar transistor formed in the semiconductor surface, the parasitic NPN bipolar comprising an n+ emitter, the p-well providing a p-base and the n-well providing an n-collector; and
an electrically conductive line connecting an n+ contact of the n-well to a p+ contact of the p-well so that the n-base and the p-base are shorted.
6. The DCSCR of claim 5 , wherein the DCSCR is coupled to an ESD detector circuit.
7. The DCSCR of claim 5 , wherein the DCSCR is coupled to a plurality of other DCSCRs in series.
8. The DCSCR of claim 5 , further comprising functional circuitry formed in and on the semiconductor surface; wherein the DCSCR is hooked in parallel with at least a first sub-circuit of the functional circuitry between a input/output (I/O) bond pad and a ground pad of the functional circuitry.
9. A direct connected silicon control rectifier (DCSCR), comprising:
a substrate having a semiconductor surface;
an n-well;
a p-well;
a parasitic PNP bipolar transistor formed in the semiconductor surface, the parasitic PNP bipolar transistor comprising a p+ emitter, an n-base and a p-collector;
a parasitic NPN bipolar transistor formed in the semiconductor surface, the parasitic NPN bipolar comprising an n+ emitter, a p-base and an n-collector; and
an electrically conductive line connecting an n+ contact of the n-base to a p+ contact of the p-base so that the n-base and the p-base are shorted,
wherein the n-well provides the n-base and the p-well provides the p-base, and
wherein the n+ emitter is not in direct contact with the electrically conductive line.
10. The DCSCR of claim 9 , wherein the DCSCR is coupled to an ESD detector circuit.
11. The DCSCR of claim 9 , wherein the DCSCR is coupled to a plurality of other DCSCRs in series.