Sloped bonding structure for semiconductor package
A bonding structure includes a substrate having a top surface and including at least one bonding pad. Each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface. A semiconductor element includes at least one pillar. Each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.
1. A bonding structure, comprising:
a substrate, having a top surface and comprising at least one bonding pad, wherein the bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface; and
a semiconductor element, comprising at least one pillar;
wherein each pillar is bonded to a portion of the sloped surface of a corresponding one of the at least one bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad;
wherein the substrate further comprises a first insulation layer disposed on the top surface thereof and between the bonding pads, and the semiconductor element further comprises a second insulation layer between the pillars, wherein the first insulation layer contacts the second insulation layer.
2. The bonding structure of claim 1 , wherein the substrate defines at least one cavity, and each bonding pad is disposed on a sidewall of a corresponding one of the at least one cavity.
3. The bonding structure of claim 2 , wherein a cross section of at least one cavity is in a V shape or a trapezoid shape.
4. The bonding structure of claim 2 , wherein an interspace is formed between an end of each pillar and a portion of the corresponding bonding pad.
5. The bonding structure of claim 1 , wherein the at least one bonding pad is disposed on the top surface of the substrate and at least one bonding pad is a tapered ring structure.
6. The bonding structure of claim 5 , wherein at least one bonding pad exposes a portion of the top surface of the substrate.
7. The bonding structure of claim 1 , wherein there is an inclination angle between the sidewall of at least one pillar and the sloped surface of the corresponding bonding pad.
8. The bonding structure of claim 1 , wherein a space defined by the sloped surface of at least one bonding pad has a maximum width and a minimum width, and a width of the corresponding pillar is greater than the minimum width of the space and less than the maximum width of the space.
9. A bonding structure, comprising:
a substrate, having a top surface and comprising at least one bonding pad, wherein each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface with a first slope; and
a semiconductor element, comprising at least one pillar, wherein each pillar is bonded to a portion of the sloped surface of a corresponding one of the at least one bonding pad and has a sidewall with a second slope, and wherein the absolute value of the first slope is less than the absolute value of the second slope.
10. The bonding structure of claim 9 , wherein the substrate defines at least one cavity, and at least one bonding pad is disposed on a sidewall of a corresponding one of the at least one cavity.
11. The bonding structure of claim 10 , wherein a cross section of at least one cavity is in a V shape or a trapezoid shape.
12. The bonding structure of claim 10 , wherein an interspace is formed between an end of at least one pillar and a portion of the corresponding bonding pad.
13. The bonding structure of claim 10 , wherein a portion of each pillar is accommodated within the corresponding one of the at least one cavity.
14. The bonding structure of claim 9 , wherein the bonding pads are disposed on the top surface of the substrate and at least one bonding pad is a tapered ring structure.
15. The bonding structure of claim 14 , wherein at least one bonding pad exposes a portion of the top surface of the substrate.
16. The bonding structure of claim 9 , wherein the substrate further comprises a first insulation layer disposed on the top surface thereof and between the bonding pads, and the semiconductor element further comprises a second insulation layer between the pillars, wherein the first insulation layer contacts the second insulation layer.
17. The bonding structure of claim 9 , wherein there is an inclination angle between the sidewall of at least one pillar and the sloped surface of a corresponding one of the at least one bonding pad.
18. The bonding structure of claim 17 , wherein the inclination angle is 0° to about 90°.
19. The bonding structure of claim 9 , wherein a space defined by the sloped surface of at least one bonding pad has a maximum width and a minimum width, and a width of a corresponding one of the at least one pillar is greater than the minimum width of the space and less than the maximum width of the space.