Granted Patent B2

US 9,658,180 · App. 14/625,008 · Granted May 23, 2017

Abstract

Claims (51)

1. A diode comprising:

a first electrode to which an electric field is applied;

a second electrode to which the electric field is applied;

a vapor gap region between the first electrode and the second electrode, wherein

a total capacitance measured between the first electrode and the second electrode varies based on presence of a polar vapor species on at least a portion of an electrode surface of at least one of the first electrode and the second electrode;

a first semiconductor region of a first conductivity type in ohmic contact with the first electrode;

a second semiconductor region of a second conductivity type in ohmic contact with the second electrode, wherein

the second conductivity type is opposite the first conductivity type; and

an intrinsic semiconductor region between the first and second semiconductor regions, wherein the vapor gap region is above the intrinsic semiconductor region.

2. The diode of claim 1 , wherein

molecules of the polar vapor species form an electric double layer at the portion of the electrode surface upon application of a low frequency alternating voltage signal between the first and second electrodes,

a capacitance due to the electric double layer increases proportionally with an increase in concentration of the molecules of the polar vapor species present on the portion of the electrode surface, and

the total capacitance includes the capacitance due to the electric double layer.

3. The diode of claim 2 , wherein

the low frequency alternating voltage signal has a frequency of less than 500 Hz.

4. The diode of claim 1 , wherein

the first electrode comprises a first plurality of fingers,

the second electrode comprises a second plurality of fingers, and

the first and second plurality of fingers form an interdigitated structure.

5. The diode of claim 4 , wherein

a spacing measured between a finger of the first plurality of fingers and an adjacent finger of the second plurality of fingers is less than 4 microns.

6. The diode of claim 1 , wherein

the first and second electrodes comprise a passive conductive metal, and

the passive conductive metal comprises one of a group including aluminum and titanium nitride.

7. The diode of claim 1 , further comprising at least one or more of:

a layer of nanoclusters located over the intrinsic semiconductor region, and

a layer of non-conductive material located over the intrinsic semiconductor region.

8. A device comprising:

a diode, the diode comprising:

a first electrode to which an electric field is applied,

a second electrode to which the electric field is applied, and

a vapor gap region between the first electrode and the second electrode, wherein a total capacitance measured between the first electrode and the second electrode varies based on presence of a first polar vapor species on at least a portion of an electrode surface of at least one of the first electrode and the second electrode;

a first semiconductor region of a first conductivity type in ohmic contact with the first electrode;

a second semiconductor region of a second conductivity type in ohmic contact with the second electrode, wherein the second conductivity type is opposite the first conductivity type;

an intrinsic semiconductor region between the first and second semiconductor regions, wherein the vapor gap region is above the intrinsic semiconductor region; and

a measuring circuit having a first terminal electrically coupled to the first electrode and a second terminal electrically coupled to the second electrode, wherein the measuring circuit is configured to provide a reading of the total capacitance measured between the first electrode and the second electrode.

9. The device of claim 8 , wherein

molecules of the first polar vapor species form an electric double layer at the portion of the electrode surface upon application of a low frequency alternating voltage signal between the first and second electrodes,

a capacitance due to the electric double layer increases proportionally with an increase in concentration of the molecules of the first polar vapor species present on the portion of the electrode surface, and

the total capacitance includes the capacitance due to the electric double layer.

10. The device of claim 9 , further comprising a power source having a first terminal electrically coupled to the first electrode and a second terminal electrically coupled to the second electrode, wherein the power source is configured to apply the low frequency alternating voltage signal to the first and second electrodes.

11. The device of claim 8 , further comprising:

a selectively reactive source configured to selectively react with the first polar vapor species present within the vapor gap region and in vicinity of the first and second electrodes to produce one or more component non-polar vapor species, wherein a second polar vapor species is also present within the vapor gap region and in vicinity of the first and second electrodes.

12. The device of claim 11 , wherein the selectively reactive source comprises at least one or more of:

a light source configured to expose the first polar vapor species to light of a suitable wavelength capable of selectively inducing photochemical decomposition of the first polar vapor species, and

a chemical source configured to expose the first polar vapor species to a chemical compound.

13. The device of claim 11 , further comprising:

a logic circuit configured to

initiate the measurement circuit to provide a first reading of the total capacitance between the first and second electrodes,

activate the selectively reactive source to selectively react with the first polar vapor species for a period of time subsequent to initiation of the first reading of the total capacitance, and

initiate the measurement circuit to provide a second reading of the total capacitance between the first and second electrodes subsequent to activation of the selectively reactive source.

Assignments (10)