Semiconductor device
A semiconductor device according to the embodiments includes: a first normally-off transistor including a first source terminal, a first drain terminal, and a first gate terminal; a normally-on transistor including a second source terminal connected to the first drain terminal, a second drain terminal, and a second gate terminal connected to the first source terminal; a protection element provided between the first gate terminal and the second drain terminal, and having breakdown voltage lower than breakdown voltage of the normally-on transistor; and a first diode including a first anode connected to the second drain terminal and a first cathode connected to the protection element.
1. A semiconductor device comprising:
a first normally-off transistor including a first source terminal, a first drain terminal, and a first gate terminal;
a normally-on transistor including a second source terminal connected to the first drain terminal, a second drain terminal, and a second gate terminal connected to the first source terminal;
a protection element provided between the first gate terminal and the second drain terminal, the protection element having breakdown voltage lower than breakdown voltage of the normally-on transistor; and
a first diode including a first anode connected to the second drain terminal and a first cathode connected to the protection element.
2. The device according to claim 1 , wherein
the protection element is a second diode including a second anode connected to the first gate terminal and a second cathode connected to the first cathode.
3. The device according to claim 2 , wherein
the second diode is a zener diode.
4. The device according to claim 1 , wherein
the protection element is a second normally-off transistor including a third source terminal connected to the first gate terminal, a third drain terminal connected to the first cathode, and a third gate terminal.
5. The device according to claim 1 , wherein
breakdown voltage of the first diode is higher than breakdown voltage of the normally-on transistor.
6. The device according to claim 1 , wherein
the first diode is a zener diode.
7. The device according to claim 1 , further comprising:
a zener diode including a third anode connected to the first source terminal and a third cathode connected to the first drain terminal.
8. The device according to claim 1 , further comprising:
a first resistance element having one end connected to the protection element and the first gate terminal.
9. The device according to claim 1 , wherein
the normally-on transistor is a GaN semiconductor HEMT.
10. The device according to claim 1 , wherein
the normally-on transistor is a SiC semiconductor JFET.
11. The device according to claim 8 , further comprising:
a gate driver circuit including an output unit and an input unit, the output unit being connected to the first resistance element, the input unit being connected to the first gate terminal and the protection element.
12. The device according to claim 11 , further comprising:
a second resistance element having one end connected to the input unit, the first gate terminal, and the protection element, the second resistance having resistance higher than resistance of the first resistance element.
13. The device according to claim 11 , further comprising:
a PN diode including a fourth anode connected to the first gate terminal, the protection element, and the input unit.
14. The device according to claim 11 , further comprising:
a zener diode including a fifth cathode connected to the first gate terminal, the protection element, and the input unit.
15. The device according to claim 11 , further comprising:
a third resistance element provided between the input unit and both the first gate terminal and the protection element.
16. The device according to claim 11 , further comprising:
a fourth resistance element provided between the protection element and the first gate terminal.