Semiconductor device and method of manufacturing the same
A semiconductor device including a semiconductor substrate having a main surface; a first insulating layer formed on the main surface and having a first main surface, the first main surface including a first region and a second region without the first area; a first coil formed on the first region of the first insulating layer; a plurality of first wirings formed on the second region of the first insulating layer; a second insulating layer formed on the first coil and on the first wirings, the second insulating layer having a second main surface; a third insulating layer formed on the second main surface above the first region of the first insulating layer and having a third main surface; and a second coil formed on the third main surface of the third insulating layer.
1. A semiconductor device comprising:
a semiconductor substrate having a main surface;
a first insulating layer formed on the main surface and having a first main surface, the first main surface including a first region and a second region without the first area;
a first coil formed on the first region of the first insulating layer;
a plurality of first wirings formed on the second region of the first insulating layer;
a second insulating layer formed on the first coil and on the first wirings, the second insulating layer having a second main surface;
a third insulating layer formed on the second main surface above the first region of the first insulating layer and having a third main surface;
a second coil formed on the third main surface of the third insulating layer;
a first electrode pad formed on the third main surface of the third insulating layer and being electrically and mechanically connected with the second coil; and
a second electrode pad formed on the second main surface of the second insulating film above the second region of the first insulating layer and being electrically connected with the first wirings,
wherein a thickness from the second main surface of the second insulating layer to the third main surface of the third insulating layer is greater than a thickness from the first main surface of the first insulating layer to the second main surface of the second insulating layer in a first direction perpendicular to a second direction along the first main surface in a cross section view.
2. The semiconductor device according to claim 1 , further comprising:
a fourth insulating layer formed on the second coil and on the first pad which has an opening formed so as to partly expose the fourth insulating layer, and the fourth insulating layer having a fourth main surface; and
a fifth insulating layer formed on the second pad which has an opening formed so as to partly expose the fifth insulating layer and the fifth insulating layer having a fifth main surface,
wherein a thickness from the second main surface of the second insulating layer to the fourth main surface of the fourth insulating layer is greater than a thickness from the second main surface of the second insulating layer to the fifth main surface of the fifth insulating layer in a first direction in the cross section view.
3. The semiconductor device according to claim 1 ,
wherein the third insulating layer is organic insulating layers.
4. The semiconductor device according to claim 1 ,
wherein the second main surface of the second insulating layer includes a first area covered with the third insulating layer, a second area covered with the fifth insulating layer, and a third area between the first area and the second area,
wherein the first area is surrounded with the third area in a plan view, and
wherein the third area is surrounded with the second area in the plan view.
5. The semiconductor device according to claim 1 ,
wherein the first coil and the second coil overlap with each other in a plan view.
6. The semiconductor device according to claim 1 , further comprising
a plurality of active elements formed on the main surface of the semiconductor substrate,
wherein the first region of the first insulating layer and the plurality of active elements overlap with each other in a plan view.
7. The semiconductor device according to claim 6 ,
wherein the second insulating layer comprises a laminated layer with an organic layer and an inorganic layer in the cross section view,
wherein the inorganic layer is formed on the first coil and the first wirings in the cross section view, and
wherein the organic layer is formed on the inorganic layer in the cross section view.
8. The semiconductor device according to claim 3 ,
wherein the organic layer comprises a polyimide film.
9. The semiconductor device according to claim 6 ,
wherein the organic layer comprises a polyimide film and the inorganic layer comprises a silicon oxide film or a silicon nitride film.
10. The semiconductor device according to claim 1 ,
wherein the semiconductor substrate comprises a SOI (Silicon on Insulator) substrate including a supporting substrate, an insulating layer formed on the supporting substrate, and a semiconductor film formed on the insulating layer.