CLEANING MEMBER, CLEANING APPARATUS, AND CLEANING METHOD
A cleaning member configured to clean a semiconductor substrate by relatively sliding over a surface of the semiconductor substrate is disclosed. The cleaning member includes a holding portion; and a brush portion supported by the holding portion and including an ion exchange resin.
1 . A cleaning member configured to clean a semiconductor substrate by relatively sliding over a surface of the semiconductor substrate, the cleaning member comprising:
a holding portion; and
a brush portion supported by the holding portion and including an ion exchange resin.
2 . The cleaning member according to claim 1 , wherein the ion exchange resin comprises a strongly basic anion exchange resin or a strongly acidic cation exchange resin.
3 . The cleaning member according to claim 1 , wherein the ion exchange resin comprises a weakly basic anion exchange resin or a weakly acidic cation exchange resin.
4 . The cleaning member according to claim 1 , wherein the ion exchange resin comprises a matrix including a copolymer of styrene and divinylbenzene or a copolymer of acrylic acid/methacrylic acid and divinylbenzene.
5 . The cleaning member according to claim 1 , wherein the brush portion comprises a porous material.
6 . The cleaning member according to claim 1 comprising a roll brush, wherein the brush portion is shaped like a circular cylinder, the brush portion being provided along an outer periphery of the holding portion.
7 . The cleaning member according to claim 6 , wherein the brush portion is provided with protrusions on an outer peripheral portion thereof.
8 . The cleaning member according to claim 7 , wherein the protrusions include a tip portion, and wherein at least the tip portion comprises a polyvinyl alcohol resin.
9 . The cleaning member according to claim 1 comprising a pencil brush, wherein the brush portion is shaped like a circular disc.
10 . The cleaning member according to claim 9 , wherein the brush portion includes an upper layer and a lower layer, the lower layer having a tip portion comprising a polyvinyl alcohol resin.
11 . The cleaning member according to claim 1 , wherein the brush portion is configured to be attachable to, detachable from, and reattachable to the holding portion.
12 . A cleaning apparatus configured to clean a surface of a semiconductor substrate comprising:
a cleaning member provided with a holding portion and a brush portion supported by the holding portion and including an ion exchange resin; and
a drive mechanism configured to slide the brush portion of the cleaning member relative to the surface of the semiconductor substrate.
13 . The cleaning apparatus according to claim 12 , further comprising a cleaning liquid supplier configured to supply a cleaning liquid to the surface of the semiconductor substrate.
14 . The cleaning apparatus according to claim 12 , wherein the cleaning member comprises a roll brush and the drive mechanism is provided with a mechanism configured to rotate the cleaning member.
15 . The cleaning apparatus according to claim 12 , wherein the cleaning member comprises a pencil brush and the drive mechanism is provided with a mechanism configured to transfer the cleaning member.
16 . A method of cleaning a surface of a semiconductor substrate comprising:
cleaning the surface of the semiconductor substrate by relatively sliding a brush portion over the surface of the semiconductor substrate, the brush portion including an ion exchange resin and being supported by a holding portion, the brush portion and the holding portion being components of a cleaning member.
17 . The method according to claim 16 being performed after the semiconductor substrate is polished by chemical mechanical polishing using a polishing agent.
18 . The method according to claim 17 , wherein the chemical mechanical polishing uses a slurry containing an abrasive grain of ceria as the polish agent, and
wherein the cleaning uses a cleaning liquid comprising pure water and the cleaning member includes a strongly basic anion exchange resin or a weakly basic anion exchange resin.
19 . The method according to claim 17 , wherein the chemical mechanical polishing uses a slurry containing an abrasive grain of alumina as the polish agent, and
wherein the cleaning uses an acidic cleaning liquid and the cleaning member includes a strongly acidic cation exchange resin or a weakly acidic cation exchange resin.
20 . The method according to claim 17 , wherein the chemical mechanical polishing uses a slurry containing an abrasive grain of silica as the polish agent, and
wherein the cleaning uses an alkaline cleaning liquid and the cleaning member includes a strongly basic anion exchange resin or a weakly basic anion exchange resin.