Electrostatic chuck mechanism and charged particle beam apparatus
View Patent ↗Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample.
1. An electrostatic chuck mechanism comprising:
a first plane that is a plane of a side in which a sample is adsorbed;
a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied; and
a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein
the electrostatic chuck mechanism is formed so that a size in an insulating plane direction of the electrostatic chuck mechanism is smaller than that of the sample for avoiding positioning the insulating plane of the electrostatic chuck mechanism on the virtual line between the edge and a surface of the second electrode.
2. The electrostatic chuck mechanism according to claim 1 , wherein
the second electrode has a plane having a different height in a direction of the virtual line, and
the plane having the different height is higher as more separated from the first electrode.
3. The electrostatic chuck mechanism according to claim 2 , wherein
the second electrode is formed in a staircase shape or in a slope shape.
4. The electrostatic chuck mechanism according to claim 1 , wherein
a third electrode is arranged between the first electrode and the second electrode.
5. The electrostatic chuck mechanism according to claim 4 , wherein
same voltage is applied to the first electrode and the third electrode.
6. The electrostatic chuck mechanism according to claim 1 , wherein
the second electrode is arranged so as to surround the first electrode.
7. A charged particle beam apparatus comprising:
a beam column that irradiates a charged particle beam;
a sample stage that moves a sample on which the charged particle beam is irradiated;
an electrostatic chuck mechanism including a first plane that is a plane of a side in which the sample is adsorbed, and a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied; and
a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein
the electrostatic chuck mechanism is formed so that a size in an insulating plane direction of the electrostatic chuck mechanism is smaller than that of the sample for avoiding positioning the insulating plane of the electrostatic chuck mechanism on the virtual line between the edge and a surface of the second electrode.
8. The charged particle beam apparatus according to claim 7 , further comprising:
a control device that adjusts a voltage applied to the second electrode in accordance with a portion on which the charged particle beam is irradiated.
9. The charged particle beam apparatus according to claim 8 , further comprising
a position detection device that detects a position of the sample, wherein
the control device adjusts a voltage applied to the second electrode on a basis of a position detection result of the position detection device.
10. A charged particle beam apparatus comprising:
a beam column that irradiates a charged particle beam;
a sample stage that moves a sample on which the charged particle beam is irradiated;
an electrostatic chuck mechanism including a first plane that is a plane of a side in which the sample is adsorbed, and a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied;
a second electrode that is arranged in a periphery of the first electrode; and
a control device that adjusts a voltage applied to the second electrode in accordance with a portion on which the charged particle beam is irradiated;
wherein the electrostatic chuck mechanism is formed so that a size in an insulating plane direction of the electrostatic chuck mechanism is smaller than that of the sample for avoiding positioning the insulating plane of the electrostatic chuck mechanism on the virtual line between the edge and a surface of the second electrode.