Plasma processing apparatus

1. A plasma processing apparatus comprising:

a processing chamber disposed inside a vacuum vessel;

a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber;

a sample stage disposed inside the processing chamber, on an upper surface of which the sample is placed;

a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage so that a waveform of the second high-frequency power is synchronized with a reference cyclical signal and capable of variably adjusting the output time, and

a controller configured to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in a waveform of current or voltage in a transient state of the second high-frequency power, the temporal change in the waveform in the transient state of the second high-frequency power being synchronized with a start of the intermittent output of the second high-frequency power and being detected by comparing, with each other, a plurality of waveforms of current or voltage which are detected in a predetermined time length in the transient state of the second high-frequency power.

2. The plasma processing apparatus according to claim 1 , wherein

the temporal change in waveform of current or voltage in the transient state of the second high-frequency power is detected while synchronized with the reference cyclical signal.

3. The plasma processing apparatus according to claim 1 , wherein

the temporal change in the waveform is detected by comparing the plurality of waveforms of current or voltage with each other, among the plurality of waveforms in a predetermined time length in the transient state of the second high-frequency power, the phases of the plurality of waveforms being aligned with each other.

4. The plasma processing apparatus according to claim 1 , wherein

stop of the plasma processing apparatus or change of the processing condition is conducted using a result of detection of the temporal change in waveform of current or voltage in the transient state of the second high-frequency power.

5. The plasma processing apparatus according to claim 1 , wherein

the waveform of the second high-frequency power is detected at every predetermined time interval in the transient state.

6. The plasma processing apparatus according to claim 1 ,

wherein the controller is further configured to detect the temporal change in the waveform by determining a time from generation of a self-bias voltage to a transition to a steady state of said waveform in which positive and negative components are substantially symmetrical.

7. A plasma processing apparatus comprising:

a processing chamber disposed inside a vacuum vessel;

a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate plasma for use in processing a sample to be processed inside the processing chamber;

a sample stage disposed inside the processing chamber, on an upper surface of which the sample is placed;

a second high-frequency power supply outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage so that a waveform of the second high-frequency power is synchronized with a reference cyclical signal and capable of variably adjusting ON time and OFF time of the output or a ratio thereof, and

a controller configured to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power, the temporal change in the waveform in the transient stage of the second high-frequency power being synchronized with a start of an ON period of the second high-frequency power and being detected by comparing, with each other, a plurality of waveforms of current or voltage which are detected in a predetermined time length in the transient state of the second high-frequency power.

8. The plasma processing apparatus according to claim 7 , wherein

the temporal change in waveform of current or voltage in the transient state of the second high-frequency power is detected while synchronized with the reference cyclical signal.

9. The plasma processing apparatus according to claim 7 ,

wherein the temporal change in the waveform is detected by comparing the plurality of waveforms of current or voltage with each other, among the plurality of waveforms in a predetermined time length in the transient state of the second high-frequency power, the phases of the plurality of waveforms being aligned with each other.

10. The plasma processing apparatus according to claim 7 ,

wherein stopping of the plasma processing apparatus or changing of the processing condition is conducted using a result of detection of the temporal change in waveform of current or voltage in the transient state of the second high-frequency power.

11. The plasma processing apparatus according to claim 7 ,

wherein the controller is further configured to detect the temporal change in the waveform by determining a time from generation of a self-bias voltage to a transition to a steady state of said waveform in which positive and negative components are substantially symmetrical.