FinFET having controlled dielectric region height

1. A method of forming a dielectric region of a fin-type field effect transistor (FinFET), the method comprising:

forming at least one fin;

forming a dielectric region adjacent a lower portion of said at least one fin;

wherein said dielectric region comprises a top surface; and

forming a blocking layer on said top surface of said dielectric region;

wherein forming said blocking layer comprises:

depositing a first blocking layer over said at least one fin and said dielectric region, wherein a portion of said first blocking layer is over said at least one fin and a portion of said first blocking layer is over said top surface of said dielectric region;

damaging said first blocking layer in a manner that damages said portion of said first blocking layer that is over said at least one fin but does not damage said portion of said first blocking layer that is over said dielectric region; and

removing said portion of said first blocking layer that is over said at least one fin;

wherein said portion of said first blocking layer that is over said top surface of said dielectric region comprises said blocking layer;

wherein said blocking layer is configured to prevent at least one subsequent FinFET fabrication operation from impacting said top surface of said dielectric region.

2. The method of claim 1 , wherein said blocking layer is further configured to prevent said at least one subsequent FinFET fabrication operation from reducing a height dimension of said dielectric region.

3. The method of claim 1 , wherein:

said at least one fin comprises a top surface, at least one sidewall and an upper post region;

said top surface of said dielectric region extends to said at least one sidewall;

a height dimension of said upper post region extends from said top surface of said dielectric region, along said at least one sidewall to said top surface of said at least one fin; and

said blocking layer is further configured to prevent said at least one subsequent FinFET fabrication operation from impacting said height dimension of said upper post.

4. The method of claim 1 wherein said at least one subsequent FinFET fabrication operation comprises a wet process.

5. The method of claim 4 , wherein a selectivity of said wet process to said blocking layer is below a predetermined threshold.

6. The method of claim 1 , wherein said at least one subsequent FinFET fabrication process comprises a pre-clean process.

7. The method of claim 6 , wherein said pre-clean process comprises application of either an aqueous solution of hydrogen fluoride or a gas phase hydrogen fluoride.

8. The method of claim 1 , wherein said at least one subsequent FinFET fabrication process comprises an etch.

9. The method of claim 8 , wherein said etch comprises a reactive ion etch.

10. The method of claim 9 , wherein said reactive ion etch causes an etch rate of said blocking layer that is below a predetermined threshold.

11. The method of claim 1 , wherein said damaging comprises amorphizing said portion of said first blocking layer that is over said at least one fin.

12. The method of claim 11 , wherein said amorphizing comprises applying ion implantation to said portion of said first blocking layer that is over said at least one fin.

13. The method of claim 12 , wherein:

said ion implantation is applied at an angle with respect to said top surface of said dielectric region; and

said angle is chosen such that said ion implantation amorphizes said portion of said first blocking layer that is over said at least one fin but does not amorphize said portion of said first blocking layer that is over said dielectric region;

wherein said portion of said first blocking layer that is over said top surface of said dielectric region comprises said blocking layer.

14. A fin-type field effect transistor (FinFET) formed according to a process comprising:

forming at least one fin;

forming a dielectric region adjacent a lower portion of said at least one fin;

wherein said dielectric region comprises a top surface; and

forming a blocking layer on said top surface of said dielectric region;

wherein forming said blocking layer comprises:

depositing a first blocking layer over said at least one fin and said dielectric region, wherein a portion of said first blocking layer is over said at least one fin and a portion of said first blocking layer is over said top surface of said dielectric region;

damaging said first blocking layer in a manner that damages said portion of said first blocking layer that is over said at least one fin but does not damage said portion of said first blocking layer that is over said dielectric region; and

removing said portion of said first blocking layer that is over said at least one fin;

wherein said portion of said first blocking layer that is over said top surface of said dielectric region comprises said blocking layer;

wherein said blocking layer is configured to prevent at least one FinFET fabrication operation from impacting said top surface of said dielectric region.

15. The FinFET of claim 14 , wherein said blocking layer is further configured to prevent said at least one FinFET fabrication operation from reducing a height dimension of said dielectric region.

16. The FinFET of claim 14 , wherein:

said at least one fin comprises a top surface, at least one sidewall and an upper post region;

said top surface of said dielectric region extends to said at least one sidewall;

a height dimension of said upper post region extends from said top surface of said dielectric region, along said at least one sidewall to said top surface of said at least one fin; and

said blocking layer is further configured to prevent said at least one FinFET fabrication operation from impacting said height dimension of said upper post.

17. The FinFET of claim 14 wherein:

said at least one FinFET fabrication operation comprises a wet process; and

a selectivity of said wet process to said blocking layer is below a predetermined threshold.

18. The FinFET of claim 14 , wherein:

said damaging comprises applying ion implantation to said portion of said first blocking layer that is over said at least one fin;

said ion implantation is applied at an angle with respect to said top surface of said dielectric region; and

said angle is chosen such that said ion implantation damages said portion of said first blocking layer that is over said at least one fin but does not damage said portion of said first blocking layer that is over said top surface of said dielectric region;

wherein said portion of said first blocking layer that is over said top surface of said dielectric region comprises said blocking layer.