Semiconductor device having electrode made of high work function material and method of manufacturing the same
Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.
1. A semiconductor device comprising:
an insulating film disposed on a substrate; and
a metal film disposed on the insulating film to directly contact the insulating film, the metal film comprising a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated,
wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film, and
the second metal film has a work function of 4.8 eV or less.
2. The semiconductor device of claim 1 , further comprising a third metal film disposed on an outermost surface of the metal film, wherein an oxidation resistance of the third metal film is greater than that of the second metal film.
3. The semiconductor device of claim 1 , further comprising a third metal film disposed on an outermost surface of the metal film, the third metal film being constituted by material same as that of the first metal film, wherein an oxidation resistance of the third metal film is greater than that of the second metal film.
4. The semiconductor device of claim 1 , further comprising a capping metal film disposed on an outermost surface of the metal film, wherein an oxidation resistance of the capping metal film is greater than that of the second metal film.
5. The semiconductor device of claim 1 , further comprising a capping metal film disposed on an outermost surface of the metal film, the capping metal film being constituted by material same as that of the first metal film, wherein an oxidation resistance of the capping metal film is greater than that of the second metal film.
6. The semiconductor device of claim 1 , wherein a work function of the metal film is adjusted by adjusting a thickness ratio of the first metal film to the second metal film.
7. The semiconductor device of claim 1 , wherein a work function of the metal film is adjusted to a desired value by adjusting a thickness ratio of the first metal film to the second metal film.
8. The semiconductor device of claim 1 , wherein the second metal film has a work function of 4.6 eV or less.
9. The semiconductor device of claim 1 , wherein a thickness of each of the first metal film and the second metal film ranges from 0.2 nm to 4 nm.
10. A semiconductor device comprising:
an insulating film disposed on a substrate; and
a metal film disposed on the insulating film to directly contact the insulating film, the metal film comprising a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated,
wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film, and
each of the first metal film and the second metal film contains a first element including a metal element, the second metal film being doped with a second element different from the first element.
11. The semiconductor device of claim 10 , wherein each of the first metal film and the second metal film comprises a metal nitride film containing a first element including a metal element, the second metal film being doped with a second element different from the first element.
12. The semiconductor device of claim 11 , wherein the first element comprises a transition metal element, and the second element comprises at least one element selected from the group consisting of Hf, Zr, Nb, Ta, V, Cr, Mo, Al, C, B, Si, O, P, and As.
13. The semiconductor device of claim 11 , wherein the first element comprises a transition metal element, and the second element comprises Group III element or Group V element.
14. The semiconductor device of claim 10 , wherein the first element comprises a transition metal element, and the second element comprises at least one element selected from the group consisting of Hf, Zr, Nb, Ta, V, Cr, Mo, Al, C, B, Si, O, P, and As.
15. The semiconductor device of claim 10 , wherein the first element comprises a transition metal element, and the second element comprises Group III element or Group V element.
16. A semiconductor device comprising:
an insulating film disposed on a substrate; and
a metal film disposed on the insulating film to directly contact the insulating film, the metal film comprising a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated,
wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film, and
the first metal film contains a first element including a metal element, and the second metal film contains a second element including a metal element, the second metal film being doped with a third element different from the first element and the second element.
17. The semiconductor device of claim 16 , wherein the first metal film comprises a metal nitride film containing a first element including a metal element, and the second metal film comprises a metal nitride film containing a second element including a metal element, the second metal film being doped with a third element different from the first element and the second element.