Multi-band laser architecture
Techniques and architecture are disclosed for providing a laser system. In one specific example embodiment, the system includes a thulium-doped fiber laser coupled by silica glass fiber to a remote optical converter (ROC) including a Ho:YAG laser and, optionally, an optical parametric oscillator (OPO) utilizing in germanium phosphide (ZnGeP 2 ; ZGP) or orientation-patterned gallium arsenide (OPGaAs). The fiber laser may emit a low-peak-power, continuous wave pump signal that pumps the Ho:YAG laser, which in turn emits a higher-peak-power, pulsed signal. When included, the OPO can be used to convert the resultant, pulsed signal to a longer wavelength (e.g., about 2-5 μm, or greater). In some cases, distributed architecture and reduced weight/bulk may be realized while eliminating the need to actively cool the ROC for operation, for example, over a broad temperature range (e.g., −55-125° C.). Also, methods of preparing high-peak-power, pulsed signals using such systems are disclosed.
1. A system comprising:
a thulium-doped fiber laser configured to emit a first signal having a peak power that does not induce a non-linear response;
a remote optical converter comprising:
Q-switched holmium-doped yttrium aluminum garnet (Ho:YAG); and
an optical parametric oscillator comprising zinc germanium phosphide (ZnGeP 2 ) or orientation-patterned gallium arsenide (OPGaAs); and
a silica glass optical fiber operatively coupling the fiber laser and the remote optical converter and configured to transport the first signal from the fiber laser to the remote optical converter.
2. The system of claim 1 , wherein:
the first signal comprises a continuous wave signal having a wavelength less than 2 μm, and the peak power is less than about 200 W; and
the remote optical converter is configured to convert the first signal to a second signal of at least one of higher peak power and different wavelength.
3. The system of claim 2 , wherein the second signal has a wavelength in the range of about 2-20 μm.
4. The system of claim 2 , wherein the second signal has a peak power in the range of about 3,000-30,000 W.
5. The system of claim 1 , wherein the silica glass optical fiber comprises:
a silica glass core portion; and
a coating portion surrounding the silica glass core portion.
6. The system of claim 5 , wherein the silica glass core portion has a diameter in the range of about 10-100 μm.
7. The system of claim 5 , wherein the silica glass optical fiber further comprises a cladding layer surrounding the silica glass core portion, the cladding layer disposed between the silica glass core portion and the coating portion.
8. The system of claim 7 , wherein:
the cladding layer comprises silica; and
the coating portion comprises acrylate.
9. The system of claim 7 , wherein the silica glass optical fiber further comprises one or more boron-doped stress applying parts (SAPs) disposed within the cladding layer adjacent the silica glass core portion.
10. The system of claim 1 , wherein the system is configured to operate in the temperature range of about −55-125° C. in the absence of active cooling.
11. A system comprising:
a thulium-doped fiber laser;
a fiber switch configured to receive output of the thulium-doped fiber laser;
a first remote optical converter (ROC) configured to be operatively coupled with the fiber switch via a first silica glass optical fiber; and
a second ROC configured to be operatively coupled with the fiber switch via a second silica glass optical fiber;
wherein the first and second ROCs each comprise:
Q-switched holmium-doped yttrium aluminum garnet (Ho:YAG); and
an optical parametric oscillator (OPO); and
wherein the fiber switch is configured to provide output of the thulium-doped fiber laser to the first and second ROCs in parallel via the first and second silica glass optical fibers, respectively.
12. The system of claim 11 , wherein:
the output of the thulium-doped fiber laser is a continuous wave signal having a wavelength less than 2 μm and a peak power less than about 200 W; and
at least one of the first and second ROCs is configured to convert the output of the thulium-doped fiber laser to at least one of a higher peak power and a different wavelength.
13. The system of claim 11 , wherein the OPO comprises cadmium selenide (CdSe), silver gallium sulfide (AgGaS 2 ), silver gallium selenide (AgGaSe 2 ), gallium(II) selenide (GaSe), rubidium titanyl arsenate (RbTiOAsO 4 ), potassium titanyl arsenate (KTiOAsO 4 ), potassium titanyl phosphate (KTiOPO 4 ), or lithium niobate (LiNbO 3 ).
14. The system of claim 11 , wherein the OPO comprises periodically-poled lithium niobate (LiNbO 3 ), periodically-poled lithium tantalate (LiTaO 3 ), or periodically-poled potassium titanyl phosphate (KTiOPO 4 ).
15. The system of claim 11 , wherein the OPO comprises zinc germanium phosphide (ZnGeP 2 ), orientation-patterned gallium arsenide (OPGaAs), or orientation-patterned gallium phosphide (OPGaP).
16. A system comprising:
a thulium-doped fiber laser;
a first remote optical converter (ROC) configured to be operatively coupled in series with the thulium-doped fiber laser via a first silica glass optical fiber; and
a second ROC configured to be operatively coupled in series with the first ROC via a second silica glass optical fiber;
wherein the first and second ROCs each comprise:
Q-switched holmium-doped yttrium aluminum garnet (Ho:YAG); and
an optical parametric oscillator (OPO); and
wherein the first ROC is configured to receive output from the thulium-doped fiber laser, and the second ROC is configured to receive output from the first ROC.
17. The system of claim 16 , wherein:
the output of the thulium-doped fiber laser is a continuous wave signal having a wavelength less than 2 μm and a peak power less than about 200 W; and
at least one of the first and second ROCs is configured to convert the output of the thulium-doped fiber laser to at least one of a higher peak power and a different wavelength.
18. The system of claim 16 , wherein the OPO comprises cadmium selenide (CdSe), silver gallium sulfide (AgGaS 2 ), silver gallium selenide (AgGaSe 2 ), gallium(II) selenide (GaSe), rubidium titanyl arsenate (RbTiOAsO 4 ), potassium titanyl arsenate (KTiOAsO 4 ), potassium titanyl phosphate (KTiOPO 4 ), or lithium niobate (LiNbO 3 ).
19. The system of claim 16 , wherein the OPO comprises periodically-poled lithium niobate (LiNbO 3 ), periodically-poled lithium tantalate (LiTaO 3 ), or periodically-poled potassium titanyl phosphate (KTiOPO 4 ).
20. The system of claim 16 , wherein the OPO comprises zinc germanium phosphide (ZnGeP 2 ), orientation-patterned gallium arsenide (OPGaAs), or orientation-patterned gallium phosphide (OPGaP).