IP Library › Patent Application 14630871
Patent Application
App. No. 14/630,871

SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS

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Quick Facts
Patent No.
US None
App. No.
14/630,871
Abstract

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

Claims (13)

1 . A solid-state imaging device including:

a semiconductor substrate provided with an effective pixel region including a plurality of light receiving sections that photo-electrically convert incident light;

an interconnection layer that is provided at a plane side opposite to a light receiving plane of the semiconductor substrate;

a first groove portion that is provided between adjacent light receiving sections of the plurality of light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate;

and an insulating material made of silicon dioxide is embedded in at least a part of the first groove portion.

2 . The solid-state imaging device according to claim 1 , further comprising: a high dielectric material film between the first groove portion and the insulating material.

3 . The solid-state imaging device according to claim 2 , the high dielectric material film is made of a hafnium oxide.

4 . The solid-state imaging device according to claim 1 , the first groove portion has a line width of 100 to 300 nm.

5 . The solid-state imaging device according to claim 1 , further comprising: a second groove portion that is provided in an optical black region located at a periphery of the effective pixel region that is formed at a predetermined depth in the semiconductor substrate from the light receiving face.

6 . The solid-state imaging device according to claim 5 , further comprising: an insulating material made of silicon dioxide is embedded in at least a part of the second groove portion.

7 . The solid-state imaging device according to claim 6 , further comprising: a high dielectric material film between the second groove portion and the insulating material.

8 . The solid-state imaging device according to claim 7 , the high dielectric material film is made of a hafnium oxide.

9 . The solid-state imaging device according to claim 5 , the second groove portion has a line width of 100 to 300 nm.