Organic thin film transistor, organic semiconductor thin film, and organic semiconductor material
An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R 1 to R 10 represent H or a substituent, provided that any two adjacent members among R 1 to R 4 and R 6 to R 9 are bonded to each other to form a substituted or unsubstituted benzene ring.
1. An organic thin film transistor having a semiconductor active layer containing a compound represented by the following general formula (2):
wherein in the general formula (2), R 1 , R 4 to R 6 and R 9 to R 18 each independently represents a hydrogen atom or a substituent.
2. The organic thin film transistor according to claim 1 , wherein at least one of R 1 , R 4 to R 6 and R 9 to R 18 represents a substituent represented by the following general formula (W):
*-L-R General Formula (W)
wherein in the general formula (W), a position shown by * represents a bonding position to the benzobisnaphthofuran skeleton; L represents a single bond or a divalent linking group; and R represents an alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a number of repetition of ethyleneoxy units of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.
3. The organic thin film transistor according to claim 1 , wherein the compound represented by the general formula (2) is represented by the following general formula (3-1) or (3-2):
wherein in the general formulae (3-1) and (3-2), R 5 and R 10 each independently represents a hydrogen atom or a substituent; L a and L b each independently represents a single bond or a divalent linking group; R a and R b each independently represents an alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a number of repetition of ethyleneoxy units of 2 or more, or an oligosiloxane group having 2 or more silicon atoms; R c and R d each independently represents a substituent; and nc and nd each independently represents an integer of from 0 to 5.
4. The organic thin film transistor according to claim 3 , wherein in the general formula (3-1) or the general formula (3-2), L a and L b each are selected from a single bond and the following general formulae (L-1) to (L-12):
wherein in the general formulae (L-1) to (L-12), a position shown by a wave line represents a bonding position to the benzobisnaphthofuran skeleton; a position shown by * represents the bonding position to R in the general formula (W); n in the general formula (L-1) represents an integer of 1 or more; m in the general formula (L-10) represents 4; m in the general formulae (L-11) and (L-12) represents 2; and R′ in the general formulae (L-1), (L-2), (L-10), (L-11) and (L-12) each independently represents a hydrogen atom or a substituent.
5. The organic thin film transistor according to claim 3 , wherein in the general formula (3-1) or the general formula (3-2), both L a and L b each are a single bond.
6. The organic thin film transistor according to claim 3 , wherein in the general formula (3-1) or the general formula (3-2), all R a , R b , R c and R d each are an alkyl group.
7. The organic thin film transistor according to claim 3 , wherein in the general formula (3-1) or the general formula (3-2), all R a , R b , R c and R d each are an alkyl group having from 6 to 12 carbon atoms.
8. A compound represented by the following general formula (2′):
wherein in the general formula (2′), R 1 , R 4 to R 6 and R 9 to R 18 each independently represents a hydrogen atom or a substituent, provided that at least one of R 1 , R 4 to R 6 and R 9 to R 18 represents a substituent.
9. The compound according to claim 8 , wherein the compound represented by the general formula (2′) is represented by the following general formula (3-1′) or (3-2′):
wherein in the general formulae (3-1′) and (3-2′), R 5 and R 10 each independently represents a hydrogen atom or a substituent; L a and L b each independently represents a single bond or a divalent linking group; R a and R b each independently represents an alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a number of repetition of 2 or more, or an oligosiloxane group having a number of repetition of 2 or more; R c and R d each independently represents a substituent; and nc and nd each independently represents an integer of from 0 to 5.
10. An organic semiconductor material for a non-light-emitting organic semiconductor device, containing a compound represented by the following general formula (2):
wherein in the general formula (2), R 1 , R 4 to R 6 and R 9 to R 18 each independently represents a hydrogen atom or a substituent.
11. A material for an organic thin film transistor, containing a compound represented by the following general formula (2):
wherein in the general formula (2), R 1 , R 4 to R 6 and R 9 to R 18 each independently represents a hydrogen atom or a substituent.
12. A coating solution for a non-light-emitting organic semiconductor device, containing a compound represented by the following general formula (2):
wherein in the general formula (2), R 1 , R 4 to R 6 and R 9 to R 18 each independently represents a hydrogen atom or a substituent.
13. The coating solution for a non-light-emitting organic semiconductor according to claim 12 , which further contains a polymer binder.
14. An organic semiconductor thin film containing the coating solution having been coated and dried, wherein the coating solution contains a compound represented by the following general formula (2):
wherein in the general formula (2), R 1 , R 4 to R 6 and R 9 to R 18 each independently represents a hydrogen atom or a substituent.
15. The organic semiconductor thin film according to claim 14 wherein the coating solution further contains a polymer binder.