Functionalized graphene-Pt composites for fuel cells and photoelectrochemical cells
A method of growing crystals on two-dimensional layered material is provided that includes reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma, depositing Pt atoms on the reversibly hydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), where the reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, and forming Pt-O on the reversibly hydrogenated two-dimensional layered material, using combustion by O 2 , where the Pt-O is used for subsequent Pt half-cycles of the ALD process, where growth of Pt crystals occurs.
1. A method of growing crystals on two-dimensional layered material, comprising:
a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma;
b. depositing Pt atoms on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and
c. forming Pt-O on said reversibly hydrogenated two-dimensional layered material, using combustion by O 2 , wherein said Pt-O is used for subsequent Pt half-cycles of said ALD process, wherein growth of Pt crystals occurs.
2. The method according to claim 1 , wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and metal dichalcogenides.
3. The method according to claim 2 , wherein said metal dichalcogenides are selected from the group consisting of molybdenum sulfide (MoS 2 ), and tungsten selenide (WSe 2 ).
4. The method according to claim 1 , wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300° C.
5. A method of growing crystals on a two-dimensional layered material, comprising:
a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma;
b. depositing crystal-forming molecules on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using atomic layer deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and
c. forming crystal-O x bonds on said reversibly hydrogenated two-dimensional layered material, using combustion by O 2 , wherein said crystal-O x is used for a subsequent half-cycle of said ALD process, wherein growth of said crystals occurs.
6. The method according to claim 5 , wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and dichalcogenides.
7. The method according to claim 6 , wherein said dichalcogenides are selected from the group consisting of molybdenum sulfide (MoS 2 ), and tungsten selenide (WSe 2 ).
8. The method according to claim 5 , wherein said crystal-forming molecule comprises Ti, wherein TiO 2 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
9. The method according to claim 5 , wherein said crystal-forming molecule comprises Al 2 , wherein Al 2 O 3 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
10. The method according to claim 5 , wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300° C.