Pinned dynamic electro-optical phase shifter
A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment ( 12 ) formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.
1. A semiconductor electro-optical phase shifter comprising:
a substrate;
an optical waveguide segment carried by said substrate;
first and second zones having opposite conductivity types and configured to form a first bipolar junction transverse to said substrate;
a dynamic control structure coupled to said first and second zones and configured to reverse bias the first bipolar junction;
a static control structure coupled to said dynamic control structure and configured to direct a quiescent current in said second zone and aligned with the first bipolar junction; and
a fourth zone having a same conductivity type as said first zone and defining, with said second zone, a third bipolar junction transverse to said substrate, said third bipolar junction being configured to be forward biased by said static control structure.
2. The semiconductor electro-optical phase shifter according to claim 1 , further comprising a third zone electrically coupled to and having a same conductivity type as said first zone, said third zone defining, with said second zone, a second bipolar junction aligned with said first bipolar junction.
3. The semiconductor electro-optical phase shifter according to claim 1 , wherein said first bipolar junction is perpendicular to an axis of said optical waveguide segment.
4. A phase shifter for an optical waveguide comprising:
a plurality of semiconductor electro-optical phase shifter modules arranged along the optical waveguide and each comprising
a substrate,
an optical waveguide segment carried by said substrate, and
first and second zones having opposite conductivity types and configured to form a first bipolar junction transverse to said substrate;
a dynamic control structure coupled to said first and second zones and configured to reverse bias each first bipolar junction; and
a static control structure coupled to said dynamic control structure and configured to direct a quiescent current in each second zone and aligned with each first bipolar junction;
each of said plurality of semiconductor electro-optical phase shifter modules further comprising a fourth zone having a same conductivity type as said first zone and defining, with said second zone, a third bipolar junction transverse to said substrate, said third bipolar junction being configured to be forward biased by said static control structure.
5. The phase shifter according to claim 4 , wherein each of said plurality of semiconductor electro-optical phase shifter modules further comprises a third zone electrically coupled to and having a same conductivity type as said first zone, said third zone defining, with said second zone, a second bipolar junction aligned with said first bipolar junction.
6. The phase shifter according to claim 4 , wherein said first bipolar junction is perpendicular to an axis of said optical waveguide segment.
7. A phase shifter for an optical waveguide comprising:
a plurality of semiconductor electro-optical phase shifter modules arranged along the optical waveguide, each comprising
a substrate,
an optical waveguide segment carried by said substrate,
first and second zones having opposite conductivity types and configured to form a first bipolar junction transverse to said substrate,
a dynamic control structure coupled to said first and second zones and configured to reverse bias the first bipolar junction,
a static control structure coupled to said dynamic control structure and configured to direct a quiescent current in said second zone and aligned with the first bipolar junction, and
a fourth zone having a same conductivity type as said first zone and defining, with said second zone, a third bipolar junction transverse to said substrate, said third bipolar junction being configured to be forward biased by said static control structure;
said dynamic and static control structures of each of said plurality of semiconductor electro-optical phase shifter modules being configured to produce phase differences in geometric progression.
8. The phase shifter according to claim 7 , wherein each of said plurality of semiconductor electro-optical phase shifter modules further comprises a third zone electrically coupled to and having a same conductivity type as said first zone, said third zone defining, with said second zone, a second bipolar junction aligned with said first bipolar junction.
9. The phase shifter according to claim 7 , wherein said first bipolar junction is perpendicular to an axis of said optical waveguide segment.