Sandwich damascene resistor
A method is provided for forming sandwich damascene resistors in MOL processes and the resulting devices. Embodiments include forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing a portion of the SL and the first dielectric layer, forming a first cavity; conformally forming a layer of resistive material in the first cavity and over the SL; depositing a second dielectric layer over the layer of resistive material and filling the first cavity; and removing the second dielectric layer, the layer of resistive material not in the first cavity, and at least a partial depth of the SL
1. A device comprising:
a substrate;
an interlayer dielectric (ILD) on the substrate;
a first dielectric layer on the (ILD);
a first cavity formed in the first dielectric layer;
a layer of resistive material lining a bottom of the first cavity;
a second dielectric layer atop the layer of resistive material and filling the first cavity;
a second cavity formed in the first dielectric layer;
a layer of second resistive material lining the second cavity; and
a third dielectric layer filling the second cavity.
2. The device according to claim 1 , further comprising forming at least one replacement metal gate (RMG) on the substrate in the ILD.
3. The device according to claim 1 , wherein the first dielectric layer comprises an oxide or a nitride.
4. The device according to claim 1 , wherein the first dielectric layer has a thickness of 30 nm to 50 nm.
5. The device according to claim 4 , wherein the layer of resistive material has a thickness of 10 nm to 25 nm.
6. The device according to claim 1 , wherein the layer of resistive material comprises tantalum silicon nitride (TaSiNx), polysilicon (doped or undoped), titanium nitride (TiN), tantalum nitride (TaN), tungsten silicide (WSix), nickel-chromium (NiCr), titanium oxynitride (TiNxOy), ruthenium monoxide (RuO)/TaN stack, tantalum carbonitride (TaCxNy), tantalum silicon carbide (TaSiC), SiC, chromium silicide (CrSi2), chromium silicon monoxide (CrSiO), or chromium-silicon-nitrogen (CrxSiyNz).
7. The device according to claim 1 , further comprising:
a second cavity formed in the first dielectric layer.
8. The device according to claim 7 , further comprising:
a layer of second resistive material lining the second cavity.
9. The device according to claim 8 , further comprising:
a third dielectric layer atop the layer of second resistive material and filling the second cavity.
10. A device comprising:
a substrate;
at least one pair of source/drain regions in the substrate;
an interlayer dielectric (ILD) on the substrate;
a replacement metal gate (RMG) on the substrate in the ILD between each pair of source/drain regions;
a first cavity formed through a first dielectric layer and a first sacrificial layer (SL) on the ILD and RMGs;
a layer of first resistive material in the first cavity;
a second dielectric layer over the layer of first resistive material and filling the first cavity, wherein the ILD is different from the first dielectric layer;
a second cavity in the first dielectric layer; and
a layer of second resistive material lining the second cavity.
11. The device according to claim 10 , further comprising:
a third dielectric layer over the layer of second resistive material and filling the second cavity.
12. The device according to claim 11 , further comprising:
a fourth dielectric layer formed over the entire substrate; and
contacts formed through the fourth dielectric layer and through the second and third dielectric layers to the layer of first resistive material and the layer of second resistive material, respectively, forming source/drain contacts through the fourth dielectric layer to the source/drain regions, and forming gate contacts through the fourth dielectric layer to the RMGs.