Light-emitting diode and fabrication method thereof
A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.
1. A light-emitting diode comprising:
a substrate;
a light-emitting epitaxial layer formed over the substrate;
a first current spreading layer over the light-emitting epitaxial layer;
an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer;
wherein the adhesive layer includes:
a first layer including a second current spreading layers;
a second layer including alternating the second current spreading layers and a first metal barrier layers; and
a third layer including the first metal barrier layers;
a second metal barrier layer over the adhesive layer; and
a metal electrode layer over the second metal barrier layer.
2. The light-emitting diode of claim 1 , wherein the first current spreading layer has a thickness of about 500-5000 Å.
3. The light-emitting diode of claim 1 , wherein the first layer has a thickness of about 100-800 Å.
4. The light-emitting diode of claim 1 , wherein the second layer has a thickness of about 50-200 Å.
5. The light-emitting diode of claim 1 , wherein the third layer has a thickness of about 100-500 Å.
6. The light-emitting diode of claim 1 , wherein the adhesive layer comprises about 6-50 alternating layers.
7. The light-emitting diode of claim 1 , wherein the second current spreading layer is composed of a same material as the first current spreading layer.
8. A light-emitting system comprising a plurality of light-emitting diode, each light-emitting diode including:
a substrate;
a light-emitting epitaxial layer formed over the substrate;
a first current spreading layer over the light-emitting epitaxial layer;
an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer;
wherein the adhesive layer includes:
a first layer including a second current spreading layers;
a second layer including alternating the second current spreading layers and a first metal barrier layers; and
a third layer including the first metal barrier layers;
a second metal barrier layer over the adhesive layer; and
a metal electrode layer over the second metal barrier layer.
9. The system of claim 8 , wherein the first current spreading layer has a thickness of about 500-5000 Å.
10. The system of claim 8 , wherein the first layer has a thickness of about 100-800 Å.
11. The system of claim 8 , wherein the second layer has a thickness of about 50-200 Å.
12. The system of claim 8 , wherein the third layer has a thickness of about 100-500 Å.
13. The system of claim 8 , wherein the adhesive layer comprises about 6-50 alternating layers.
14. The system of claim 8 , wherein the second current spreading layer is composed of a same material as the first current spreading layer.