Granted Patent B2

US 9,841,674 · App. 14/644,783 · Granted Dec 12, 2017

Abstract

Claims (45)

1. A patterning method comprising:

forming a ground layer on a processing target layer, the ground layer having higher affinity for one of a first segment and a second segment contained in a self-assembly material than for the other segment;

forming and patterning a neutral layer neutral to the first segment and the second segment on the ground layer;

irradiating exposed surfaces of the ground layer and the neutral layer with an energy ray;

applying the self-assembly material onto the irradiated ground layer and the irradiated neutral layer;

phase-separating the self-assembly material into a first domain including the first segment and a second domain including the second segment by annealing the self-assembly material; and

selectively removing one of the first domain and the second domain.

2. The method according to claim 1 , further comprising annealing the ground layer and the neutral layer at a predetermined temperature in irradiation of the energy ray.

3. The method according to claim 2 , wherein the predetermined temperature is 200° C. or lower.

4. The method according to claim 1 , wherein

the patterning of the neutral layer comprises:

forming the neutral layer on the ground layer;

forming a resist pattern on the neutral layer; and

etching the neutral layer with the resist pattern as a mask.

5. The method according to claim 4 , further comprising stripping the resist pattern with a stripping liquid after etching the neutral layer.

6. The method according to claim 1 , wherein the energy ray is one of an electron beam, EUV light, VUV light, UV light, an ion beam, an X ray and visible light.

7. The method according to claim 1 , wherein the processing target layer is a quartz glass substrate.

8. The method according to claim 1 , wherein the neutral layer contains a resist material.

9. The method according to claim 1 , wherein the exposed surfaces of the ground layer and the surface of the neutral layer are modified by the irradiating the exposed surfaces of the ground layer and the surface of the neutral layer with an energy ray.

10. The method according to claim 1 , further comprising washing the ground layer and the neutral layer after the patterning the neutral layer.

11. The method according to claim 10 , wherein the ground layer and the neutral layer are washed with ultrapure water.

12. A producing method of a template for nanoimprint, the method comprising:

forming a ground layer on a processing target layer, the ground layer having higher affinity for one of a first segment and a second segment contained in a self-assembly material than for the other segment;

forming and patterning a neutral layer neutral to the first segment and the second segment on the ground layer;

irradiating exposed surfaces of the ground layer and the neutral layer with an energy ray;

applying the self-assembly material onto the irradiated ground layer and the irradiated neutral layer;

phase-separating the self-assembly material into a first domain including the first segment and a second domain including the second segment by annealing the self-assembly material; and

selectively removing one of the first domain and the second domain.

13. A patterning method comprising:

forming a ground layer on a processing target layer, the ground layer having higher affinity for one of a first segment and a second segment contained in a self-assembly material than for the other segment;

forming a neutral layer on the ground layer;

forming a resist pattern on a neutral layer;

etching the neutral layer with the resist pattern as a mask and exposing surfaces of the ground layer, the neutral layer neutral to the first segment and the second segment on the ground layer;

irradiating the exposed surfaces of the ground layer and the etched neutral layer with an energy ray;

applying the self-assembly material onto the irradiated ground layer and the irradiated neutral layer;

phase-separating the self-assembly material into a first domain including the first segment and a second domain including the second segment by annealing the self-assembly material; and

selectively removing one of the first domain and the second domain.

14. The method according to claim 13 , further comprising annealing the ground layer and the neutral layer at a predetermined temperature in irradiation of the energy ray.

15. The method according to claim 14 , wherein the predetermined temperature is 200° C. or lower.

16. The method according to claim 13 , further comprising stripping the resist pattern with a stripping liquid after etching the neutral layer.

17. The method according to claim 13 , wherein the processing target layer is a quartz glass substrate.

18. The method according to claim 13 , wherein the neutral layer contains a resist material.

19. The method according to claim 13 , wherein the exposed surfaces of the ground layer and the surface of the neutral layer are modified by the irradiating the exposed surfaces of the ground layer and the surface of the neutral layer with an energy ray.

20. The method according to claim 13 , further comprising washing the ground layer and the neutral layer after the patterning the neutral layer.

21. The method according to claim 20 , wherein the ground layer and the neutral layer are washed with ultrapure water.

Assignments (6)