Light-emitting devices on textured substrates

1. A method, comprising:

forming a plurality of recesses in a first side of a substrate, wherein the recesses each include a first sidewall surface and a second sidewall surface;

forming a reflective layer over the first side of the substrate, wherein the reflective layer are formed on the first and second sidewall surfaces of the recesses;

removing portions of the reflective layer formed on the second sidewall surfaces of the recesses; and

forming a light-emitting diode (LED) on a second side of the substrate, wherein the second side being opposite to the first side.

2. The method of claim 1 , wherein the first sidewall surfaces are outer sidewall surfaces, and wherein the second sidewall surfaces are inner sidewall surfaces.

3. The method of claim 1 , wherein the forming of the recesses is performed in a manner such that at least some of the recesses have different shapes than other recesses.

4. The method of claim 3 , wherein the recesses are formed with different slant angles.

5. The method of claim 1 , wherein: the forming of the recesses is performed in a manner such that each recess further includes a bottom surface that adjoins the first sidewall surface and the second sidewall surface; and the removing of the portions of the reflective layer is performed such that at least a portion of each of the bottom surface is free of the reflective layer.

6. The method of claim 1 , wherein the forming of the recesses is performed such that at least some of the recesses are circumferentially surrounded by other recesses in a top view.

7. The method of claim 6 , wherein each of the recesses is a closed loop in the top view.

8. The method of claim 1 , wherein the step of forming the light-emitting diode (LED) on a second side of the substrate comprises bonding the second side of the substrate to the light-emitting diode (LED).

9. The method of claim 1 , wherein the substrate includes a sapphire substrate, a silicon substrate, a silicon carbide substrate, a silicon germanium substrate, or a substrate containing III-V compound materials.

10. A method, comprising:

forming a plurality of trenches in a substrate, wherein the trenches each extend from a first side of the substrate toward a second side of the substrate opposite the first side, wherein the trenches each include a first sidewall surface, a second sidewall surface, and a bottom surface adjoining the first and second sidewall surfaces;

forming a reflective material in each of the trenches, the reflective material covering the first sidewall surface, the second sidewall surface, and the bottom surface in each of the trenches;

removing portions of the reflective material from each of the trenches in a manner such that the second sidewall surface and at least a portion of the bottom surface in each trench is free of being covered with the reflective material; and

forming a light-emitting diode (LED) on a second side of the substrate, wherein the second side being opposite to the first side.

11. The method of claim 10 , wherein the first sidewall surfaces are outer sidewall surfaces, and wherein the second sidewall surfaces are inner sidewall surfaces.

12. The method of claim 10 , wherein the forming of the trenches is performed in a manner such that the trenches have different slant angles.

13. The method of claim 10 , wherein each of the trenches is a closed loop in a top view, and wherein at least some of the trenches are encircled by at least some other trenches in the top view.

14. The method of claim 10 , wherein the step of forming the light-emitting diode (LED) on the second side of the substrate comprises bonding the second side of the substrate to the light-emitting diode (LED).

15. A method of forming a semiconductor device, the method comprising:

providing a substrate;

forming a plurality of trenches extending from a surface of the substrate into the substrate, wherein the plurality of trenches comprises inner sidewalls and outer sidewalls;

forming a reflective layer on the surface of the substrate and on the inner sidewalk and the outer sidewalls;

removing the reflective layer from one of the inner sidewalls of the plurality of trenches; and

forming a light-emitting diode (LED) on a second side of the substrate, wherein the second side being opposite to the first side.

16. The method of claim 15 , wherein the step of forming the light-emitting diode on the second side of the substrate comprises bonding the light-emitting diode (LED) onto the substrate, with the plurality of trenches and the light-emitting diode (LED) being on opposite sides of the substrate.

17. The method of claim 15 , wherein the step of forming the plurality of trenches comprises laser micro-machining.