Substrate etching method
Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.
1. A substrate etching method, comprising:
a deposition operation for depositing a polymer on a side wall of a silicon groove and an etching operation for etching the side wall of the silicon groove, the deposition operation and the etching operation being alternately repeated at least twice,
wherein, in a process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule.
2. The substrate etching method according to claim 1 , wherein the preset rule comprises:
keeping, within a predetermined time elapsed from a start of a first etching operation, the chamber pressure at the preset highest pressure when performing the etching operation; and
decreasing, after the predetermined time elapsed from the start of the first etching operation, the chamber pressure from the preset highest pressure to the preset lowest pressure in accordance with a functional relationship in the process of subsequent etching operations.
3. The substrate etching method according to claim 2 , wherein after the predetermined time elapsed from the start of the first etching operation, the chamber pressure is kept unchanged in the process of each etching operation; and the chamber pressure corresponding to each etching operation is lower than the chamber pressure corresponding to the previous etching operation.
4. The substrate etching method according to claim 3 , Wherein the functional relationship comprises one of a linear functional relationship, a piecewise functional relationship, an exponential functional relationship, or polynomial functional relationship.
5. The substrate etching method according to claim 2 , wherein after the predetermined time lapsed from the start of the first etching operation, the chamber pressure is gradually decreased in accordance with the functional relationship in the process of each etching operation; and the chamber pressure corresponding to each etching operation is lower than the chamber pressure corresponding to the previous etching operation.
6. The substrate etching method according to claim 5 , wherein the functional relationship comprises one of a linear functional relationship, a piecewise functional relationship, an exponential functional relationship, or a polynomial functional relationship.
7. The substrate etching method according to claim 2 , wherein the predetermined time is in the range of 0.5 s to 20 s.
8. The substrate etching method according to claim 7 , wherein the predetermined time is in the range of 1 s to 10 s.
9. The substrate etching method according to claim 8 , wherein the functional relationship comprises one of a linear functional relationship, a piecewise functional relationship, an exponential functional relationship, or a polynomial functional relationship.
10. The substrate etching method according to claim 7 , wherein the functional relationship comprises one of a linear functional relationship, a piecewise functional relationship, an exponential functional relationship, or a polynomial functional relationship.
11. The substrate etching method according to claims 2 , wherein, the functional relationship comprises one of a linear functional relationship, a piecewise functional relationship, an exponential functional relationship, or a polynomial functional relationship.
12. The substrate etching method according to claim 11 , wherein the preset highest pressure is in the range of 20 mT to 200 mT, the preset lowest pressure is in the range of 1 mT to 40 mT, an excitation power is in the range of 50 W to 3000 W, a bias power is in the range of 0 W to 100 W, and flow of an etching gas is in the range of 50 sccm to 1000 sccm.
13. The substrate etching method according to claim 1 , wherein the preset rule comprises:
gradually decreasing the chamber pressure in accordance with a preset functional relationship in the process of completing all cycles of the etching operation.
14. The substrate etching method according to claim 13 , wherein the functional relationship comprises one of a linear functional relationship, a piecewise functional relationship, an exponential functional relationship, or a polynomial functional relationship.
15. The substrate etching method according to claim 1 , wherein time for completing all cycles of the etching operation is 0.1 s to 100 s.