IP Library › Granted Patent US 10,109,752
Granted Patent B2
US 10,109,752 · App. 14/647,422 · Granted Oct 23, 2018

Nanowire-modified graphene and methods of making and using same

Inventors: Hyesung Park (Cambridge, MA); Sehoon Chang (Cambridge, MA); Jing Kong (Winchester, MA); Silvija Gradecak (Cambridge, MA)
Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
H01L31/022483B82Y10/00C08G61/126H01L31/0296H01L31/0324H01L31/035218H01L31/035227H01L31/1884H01L51/0021H01L51/4233H01L51/442C08G2261/1412C08G2261/3223C08G2261/91H01L33/40H01L51/0036H01L51/0037H01L51/0045H01L51/4266H01L2031/0344H01L2251/305Y02E10/549Y02P70/521
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Quick Facts
Patent No.
US 10,109,752
App. No.
14/647,422
Granted
Oct 23, 2018
Kind
B2
Abstract

A transparent electrode can include a graphene sheet on a substrate, a layer including a conductive polymer disposed over the graphene sheet, and a plurality of semiconducting nanowires, such as ZnO nanowires, disposed over the layer including the conductive polymer.

Claims (28)

1. A transparent electrode comprising:

a graphene sheet on a substrate;

an interlayer including a conductive polymer disposed over the graphene sheet wherein the interlayer includes a polythiophene, the interlayer modifying the graphene to enhance chemical compatibility between the graphene and a semiconducting nanowire while maintaining the graphene's electrical and structural properties; and

a plurality of semiconducting nanowires disposed over the interlayer.

2. The transparent electrode of claim 1 , wherein the plurality of semiconducting nanowires are substantially parallel to one another.

3. The transparent electrode of claim 2 , wherein the long axes of plurality of semiconducting nanowires are substantially perpendicular to the graphene sheet.

4. The transparent electrode of claim 1 , wherein the plurality of semiconducting nanowires comprise ZnO.

5. A device comprising the transparent electrode of claim 1 , further comprising a photoactive material disposed over the plurality of semiconducting nanowires.

6. The device of claim 5 , wherein the photoactive material includes semiconductor nanocrystals or P3HT.

7. The device of claim 5 , further comprising a second electrode deposited over the photoactive material.

8. A method of making a transparent electrode comprising:

providing a graphene sheet on a substrate;

depositing an interlayer including a conductive polymer disposed over the graphene sheet wherein the interlayer includes a polythiophene; and

growing a plurality of semiconducting nanowires over the interlayer and modifying the graphene to enhance chemical compatibility between the graphene and a semiconducting nanowire while maintaining the graphene's electrical and structural properties.

9. The method of claim 8 , wherein depositing the interlayer includes spin-casting.

10. The method of claim 8 , wherein growing the plurality of semiconducting nanowires over the interlayer includes a hydrothermal deposition.

11. The method of claim 8 , wherein the plurality of semiconducting nanowires comprise ZnO.

12. The method of claim 8 , wherein the interlayer includes a polythiophene derivative.

13. A method of making a device including the method of claim 8 , further comprising depositing a photoactive material disposed over the plurality of semiconducting nanowires.

14. The method of claim 13 , wherein the photoactive material includes semiconductor nanocrystals or P3HT.

15. The method of claim 13 , further comprising depositing a second electrode over the photoactive material.

16. A photovoltaic device comprising

a graphene sheet on a substrate;

an interlayer including a conductive polymer disposed over the graphene sheet wherein the interlayer includes a polythiophene, the interlayer modifying the graphene to enhance chemical compatibility between the graphene and a semiconducting nanowire while maintaining the graphene's electrical and structural properties; and

a plurality of semiconducting nanowires disposed over the interlayer.

17. The photovoltaic device of claim 16 , further comprising a photoactive material disposed over the plurality of semiconducting nanowires.

18. The photovoltaic device of claim 16 , wherein the plurality of semiconducting nanowires comprise ZnO.

19. A method of generating electricity, comprising illuminating the photovoltaic device of claim 16 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2015
From: PARK, HYESUNG; CHANG, SEHOON; KONG, JING; GRADECAK, SILVIJA
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 036161/0349 →
Continuity (2)
Provisional Application 61729795 · Nov 26, 2012
Related Publication 20150311363A1 · Oct 29, 2015