Thin substrate processing device

1. A substrate processing device comprising:

a processing chamber;

a transporting unit arranged in the processing chamber; and

an inverting chamber connected to the processing chamber to allow the transporting unit to transport a substrate, wherein

the processing chamber includes:

a substrate processing unit configured to process the substrate;

a cooling unit configured to cool the substrate when the substrate processing unit is processing the substrate; and

a position changing unit configured to change a position of the cooling unit relative to the substrate located at a processing position at which the substrate is processed by the substrate processing unit,

the transporting unit is configured to transport the substrate between the processing position and a non-processing position, at which the substrate is not processed by the substrate processing unit, while supporting a lower end of the substrate in an upright state of the substrate,

the position changing unit is configured to change the position of the cooling unit between a contact position at which the cooling unit contacts the substrate and a non-contact position at which the cooling unit does not contact the substrate,

the transporting unit is configured to transport the substrate when the cooling unit is located at the non-contact position,

the inverting chamber includes a substrate rotating unit having a mounting section on which the substrate of the upright state is mounted, wherein the substrate rotating unit is configured to rotate the mounting section around an axis which is orthogonal to a bottom wall of the inverting chamber; and

the substrate processing device is configured to process one surface of the substrate in the processing chamber, turn the substrate by 180° in the inverting chamber after the one surface of the substrate is processed, and process the other surface of the substrate in the processing chamber.

2. The substrate processing device according to claim 1 , comprising:

a first processing chamber and a second processing chamber, each being provided as the processing chamber, wherein

the inverting chamber is arranged between the first processing chamber and the second processing chamber in a transportation direction of the substrate,

the transporting unit includes a first transportation lane, which is set on a bottom wall of the first processing chamber and extends to the transportation direction, and a second transportation lane, which is set on a bottom wall of the second processing chamber and extends to the transportation direction, and

the substrate rotating unit is set within the inverting chamber between the first transportation lane and the second transportation lane.

3. The substrate processing device according to claim 1 , herein; the substrate processing unit includes at least one of:

a film formation processing unit configured to form a film on the substrate by sputtering a target;

a reverse sputtering unit configured to perform reverse sputtering on the substrate by applying a bias voltage to the substrate;

an ion processing unit configured to perform ion bombardment on the substrate; and

an etching unit configured to perform an etching on the substrate by applying a bias voltage to the substrate while generating plasma with an induction coil.

4. The substrate processing device according to claim 3 , wherein

the substrate processing unit includes the film formation processing unit and the reverse sputtering unit that share a vacuum chamber,

the target of the film formation processing unit is opposed to the substrate in the vacuum chamber, and

the substrate processing device further comprises a shutter configured to cover a surface of the target when the reverse sputtering unit performs reverse sputtering on a surface of the substrate opposing the surface of the target.

5. The substrate processing device according to claim 3 , wherein the reverse sputtering unit includes:

a voltage application unit configured to apply a bias voltage to the substrate; and

a gas supply unit configured to supply a gas to the substrate, and the voltage application unit is configured to apply a bias voltage having a frequency that is higher than or equal to 1 MHz and lower than or equal to 6 MHz to the substrate supplied with the gas.

6. The substrate processing device according to claim 3 , wherein the reverse sputtering unit includes:

a voltage application unit configured to apply a bias voltage to the substrate, and

a gas supply unit configured to supply a gas to the substrate,

the voltage application unit is configured to apply the bias voltage to the substrate so that a voltage having a frequency that is higher than or equal to 13 MHz and lower than or equal to 28 MHz and a voltage having a frequency that is higher than or equal to 100 kHz and lower than or equal to 1 MHz are superimposed to the substrate supplied with the gas.

7. The substrate processing device according to claim 1 , wherein the cooling unit is an electrostatic chuck configured to electrically attract the substrate, and

the electrostatic chuck is configured to cool the substrate by attracting a surface of the substrate opposite to a processed surface thereof that is processed by the substrate processing unit.

8. The substrate processing device according to claim 1 , wherein

the cooling unit is a gas cooling unit configured to supply a gas to the substrate, and

the gas cooling unit is configured to cool the substrate by supplying the gas to a surface of the substrate opposite to a processed surface there of that is processed by the substrate processing unit.

9. The substrate processing device according to claim 8 , further comprising:

a tray attached to a circumference of the substrate; and

a sealing member attached to the gas cooling unit at a location opposing the tray, wherein the gas cooling unit is configured to supply the gas to a cooling void sealed by the sealing member.

10. The substrate processing device according to claim 9 , wherein

the tray is configured to pull the substrate from a center of the substrate toward a circumference of the substrate, and

the gas cooling unit is configured to supply the gas when the substrate is pulled.

11. The substrate processing device according to claim 8 , wherein

the substrate processing unit includes a film formation processing unit configured to form a film on the substrate by sputtering a target, and

the gas cooling unit is configured to supply the gas also to a surface on which the film is formed by depositing sputtering grains on the substrate.