Method for producing SiC substrate
View Patent ↗A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film ( 10 ) to cover a surface ( 1 a ) of the SiC substrate ( 1 ); and a planarization process of polishing the SiC substrate ( 1 ) from an oxide film side ( 10 ) in accordance with a CMP method so as to remove the oxide film ( 10 ), and of polishing the surface ( 1 a ) of the SiC substrate ( 1 ) to planarize the surface ( 1 a ).
1. A method of manufacturing a SiC substrate which includes a process of polishing and planarizing a surface of the SiC substrate, the method comprising at least:
an oxide film-forming process of forming an oxide film to cover the surface of the SiC substrate; and
a planarization process of polishing the SiC substrate from an oxide film side in accordance with a chemical mechanical polishing (CMP) method so as to completely remove the oxide film, and of polishing the surface of the SiC substrate to planarize the surface, wherein
in the oxide film-forming process, the oxide film is formed by a P-CVD method or a RF sputtering method and the oxide film is formed in a film thickness of 0.5 μm or greater.
2. The method of manufacturing a SiC substrate according to claim 1 ,
wherein in the oxide film-forming process, when forming the oxide film on the surface of the SiC substrate, a film-forming rate is 0.15 (μm/hr) or greater.
3. The method of manufacturing a SiC substrate according to claim 1 ,
wherein in the planarization process, when polishing the oxide film and the SiC substrate in accordance with the CMP method, a polishing rate of the oxide film is greater than a polishing rate of the SiC substrate.
4. The method of manufacturing a SiC substrate according to claim 3 ,
wherein in the planarization process, when polishing the oxide film and the SiC substrate in accordance with the CMP method, a ratio of the polishing rate of the oxide film with respect to the polishing rate of the SiC substrate is 10 to 1 or greater, and the polishing rate of the SiC substrate is 0.1 (μm/hr) or greater.
5. The method of manufacturing a SiC substrate according to claim 1 ,
wherein the SiC substrate is a SiC substrate in which an epitaxial layer is laminated on at least one surface.
6. The method of manufacturing a SiC substrate according to claim 1 , further comprising:
a rough polishing process of polishing the surface of the SiC substrate in accordance with a mechanical polishing method before the oxide film-forming process.