Reversely-installed photonic crystal LED chip and method for manufacturing same

1. A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED), comprising:

providing an initial substrate comprising an epitaxial-growth surface and a light-output surface;

performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate;

forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and

performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form a flip-chip photonic-crystal LED,

wherein performing the nanoimprint process on the epitaxial-growth surface of the initial substrate includes:

cleaning the initial substrate and forming a first imprint resist layer on the epitaxial-growth surface of the initial substrate;

pressing a first imprint mold onto the first imprint resist layer to transfer patterns of the first imprint mold into the first imprint resist layer;

removing the first imprint mold and performing an etching process on the first imprint resist layer, thereby forming patterns in the epitaxial-growth surface of the initial substrate; and

removing the first imprint resist layer to form the nano-level patterned substrate.

2. The method of claim 1 , wherein the patterns of the first imprint mold are first nano-level bumps and the first nano-level bumps are regularly arranged.

3. The method of claim 1 , wherein the patterns of the first imprint mold are first nano-level bumps and the first nano-level bumps are irregularly arranged.

4. The method of claim 1 , wherein the patterns of the first imprint mold are transferred into the first imprint resist layer by a thermoplastic curing process or an ultraviolet light curing process.

5. The method of claim 1 , wherein forming the flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate includes:

growing an epitaxial layer over the epitaxial-growth surface of the nano-level patterned substrate, the epitaxial layer sequentially including an n-type gallium nitride layer, a multi-quantum well active layer and a p-type gallium nitride layer;

etching the epitaxial layer to form therein a plurality of contact holes exposing portions of the n-type GaN layer;

forming a metal reflector layer over the p-type GaN layer;

forming an insulating layer over the metal reflector layer;

patterning the insulating layer to form therein a plurality of openings exposing portions of the metal reflector layer and portions of the n-type GaN layer;

forming a contact solder layer in the plurality of openings; and

welding the contact solder layer onto a heat dissipation substrate using a welding process.

6. The method of claim 1 , wherein performing the nanoimprint process on the light-output surface of the nano-level patterned substrate includes:

forming a second imprint resist layer on the light-output surface of the nano-level patterned substrate;

pressing a second imprint mold on the second imprint resist layer to transfer patterns of the second imprint mold into the second imprint resist layer;

removing the second imprint mold and performing an etching process on the second imprint resist layer, thereby forming patterns in the light-output surface of the nano-level patterned substrate; and

removing the second imprint resist layer to form a photonic-crystal structure.

7. The method of claim 6 , wherein the patterns of the second imprint mold are second nano-level bumps and the second nano-level bumps are regularly arranged and have a size and a pitch each in a same magnitude order as a wavelength of light emitted from the flip-chip photonic-crystal LED.

8. The method of claim 7 , wherein the second nano-level bumps have a cylindrical or cuboid shape.

9. The method of claim 6 , wherein the nano-level patterned substrate is thinned prior to forming the second imprint resist layer on the light-output surface of the nano-level patterned substrate.

10. The method of any of claim 1 wherein the initial substrate is a sapphire substrate.

11. A flip-chip photonic-crystal light-emitting diode (LED) flip-chip fabricated using the method as defined in claim 1 , comprising:

a nano-level patterned, photonic-crystal substrate and a flip-chip LED structure, the nano-level patterned, photonic-crystal substrate comprising an epitaxial-growth surface and a light-output surface, the epitaxial-growth surface being formed therein with a nano-level pattern structure, the light-output surface being formed therein with a photonic-crystal structure, the flip-chip LED structure being formed on the epitaxial-growth surface.

12. The flip-chip photonic-crystal LED of claim 11 , wherein the flip-chip LED structure comprises:

an epitaxial layer grown over the epitaxial-growth surface of the nano-level patterned, photonic-crystal substrate, the epitaxial layer sequentially including an n-type GaN layer, a multi-quantum well active layer and a p-type GaN layer;

a plurality of contact holes formed in the epitaxial layer, the plurality of contact holes exposing portions of the n-type GaN layer;

a metal reflector layer overlying the p-type GaN layer;

an insulating layer overlying the metal reflector layer;

a plurality of openings formed in the insulating layer, the plurality of openings exposing portions of the metal reflector layer and portions of the n-type GaN layer;

a contact solder layer formed in the plurality of openings; and

a heat dissipation substrate welded to the contact solder layer.

13. The flip-chip photonic-crystal LED of claim 11 , wherein patterns of a second imprint mold used in the nanoimprint process for forming the photonic-crystal structure are second nano-level bumps and the second nano-level bumps are regularly arranged and have a size and a pitch each in the same magnitude order as a wavelength of light emitted from the flip-chip photonic-crystal LED.

14. The flip-chip photonic-crystal LED of claim 13 , wherein the second nano-level bumps have a cylindrical or cuboid shape.