Semiconductor substrate for controlling a strain
Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.
1. A semiconductor substrate, comprising:
a substrate;
one or more compound semiconductor layers disposed on the substrate; and
one or more control layers disposed between the compound semiconductor layers,
wherein each control layer comprises a plurality of nitride semiconductor layers including at least Al,
wherein the plurality of nitride semiconductor layers include Al(1-x)GaxN (0≤x≤1),
wherein each control layer comprises:
first and third nitride semiconductor layers including AlGaN; and
a second nitride semiconductor layer disposed between the first and third nitride semiconductor layers and including AlN, and
wherein at least one of the first and third nitride semiconductor layers is divided into first and second sections in a thickness direction, a concentration of Al in one of the first and second sections varies linearly, and a concentration of Al in the other of the first and second sections varies non-linearly.
2. The semiconductor substrate according to claim 1 , further comprising a buffer layer disposed between the substrate and the compound semiconductor layers.
3. The semiconductor substrate according to claim 1 , wherein the plurality of nitride semiconductor layers include different semiconductor materials.
4. The semiconductor substrate according to claim 3 , wherein at least one of the plurality of nitride semiconductor layers includes AlN.
5. The semiconductor substrate according to claim 1 , wherein a concentration of Al in at least one of the first and third nitride semiconductor layers varies linearly or nonlinearly.
6. The semiconductor substrate according to claim 1 , wherein the first nitride semiconductor layer and a compound semiconductor layer adjacent thereto includes GaN in common.
7. The semiconductor substrate according to claim 1 , wherein the third nitride semiconductor layer and another compound semiconductor layer adjacent thereto includes GaN in common.
8. The semiconductor substrate according to claim 1 , wherein the second nitride semiconductor layer includes a dopant.
9. The semiconductor substrate according to claim 8 , wherein a concentration of the dopant is from 0.5E18/cm3 to 5E19/cm3.
10. The semiconductor substrate according to claim 1 , wherein in at least one of the plurality of nitride semiconductor layers, x is equal to 0.
11. The semiconductor substrate according to claim 1 , wherein x is from 0.05 to 0.95.
12. A semiconductor substrate, comprising:
a substrate;
one or more compound semiconductor layers disposed on the substrate; and
one or more control layers disposed between the compound semiconductor layers,
wherein the control layer comprises:
a plurality of first nitride semiconductor layers; and
a plurality of second nitride semiconductor layers disposed between the plurality of first nitride semiconductor layers,
wherein each of the plurality of second nitride semiconductor layers include AlN and a dopant, and
wherein a concentration of the dopant in each of the plurality of second nitride semiconductor layers increases from the substrate to the compound semiconductor layer of an uppermost layer among the one or more compound semiconductor layers.
13. The semiconductor substrate according to claim 12 , wherein,
a lowermost layer among the first and second nitride semiconductor layers is in contact with a compound semiconductor layer, and
an uppermost layer among the first and second nitride semiconductor layers is in contact with another compound semiconductor layer.
14. A semiconductor substrate, comprising:
a substrate;
one or more compound semiconductor layers disposed on the substrate; and
one or more control layers disposed between the compound semiconductor layers,
wherein the control layer comprises:
a plurality of AlN layers; and
a plurality of AlGaN layers disposed alternately with the AlN layers, and
wherein a concentration of Al in each of the AlN layers is greater than that in each of the AlGaN layers and varies.
15. The semiconductor substrate according to claim 14 , wherein the concentration of Al in the AlGaN layer varies linearly or stepwise.
16. The semiconductor substrate according to claim 14 , wherein the AlGaN layer comprises:
a first AlGaN layer disposed under the AlN layer; and
a second AlGaN layer disposed over the AlN layer.
17. The semiconductor substrate according to claim 16 , wherein,
the first AlGaN layer, the AlN layer, and the second AlGaN layer are defined as one control pair, and
the control layer includes two or more control pairs.
18. The semiconductor substrate according to claim 17 , wherein an AlGaN layer in a first control pair is in contact with an AlGaN layer in a second control pair.
19. The semiconductor substrate according to claim 17 , wherein an AlN layer in a first control pair is in contact with an AlN layer in a second control pair.
20. The semiconductor substrate according to claim 17 , wherein an uppermost layer of a first control pair and a lowermost layer of a second control pair include one of the first and second AlGaN layers in common.
21. The semiconductor substrate according to claim 14 , wherein one of the AlN layer and the AlGaN layer is a lowermost layer, and the other is an uppermost layer.
22. A semiconductor substrate, comprising:
a substrate;
one or more compound semiconductor layers disposed on the substrate; and
one or more control layers disposed between the compound semiconductor layers,
wherein the one or more control layers comprises:
first and third nitride semiconductor layers including AlGaN; and
a second nitride semiconductor layer disposed between the first and third nitride semiconductor layers and including AlN,
wherein at least one of the first and third nitride semiconductor layers is divided into first and second sections in a thickness direction, a concentration of Al in one of the first and second sections varies linearly, and a concentration of Al in the other of the first and second sections varies non-linearly,
wherein an uppermost layer among the compound semiconductor layers is a conductive semiconductor layer, and
wherein the conductive semiconductor layer has a thickness of 2 μm to 6 μm.