Method of forming supra low threshold devices
View Patent ↗A semiconductor device and a method for making the semiconductor device are provided. The semiconductor device includes a non-volatile memory cell having a gate dielectric and formed in a non-volatile memory well region; a first transistor type formed using a first gate oxide and formed in a first transistor well region; a second transistor type formed using a second gate oxide and formed in a second transistor well region; and a third transistor type formed using a third gate oxide and formed in a third transistor well region. The gate dielectric and the first and second gate oxides are formed from the same oxide stack. The first, second, and third transistor types include extension implants formed using a first implant dopant, and the non-volatile memory cell includes extension implants formed using a second implant dopant, where the first and second implant dopants are different.
1. A method for making a semiconductor device, the method comprising:
forming trench isolation regions in a surface of a substrate to delineate a high voltage transistor region, a first low voltage transistor region, a second low voltage transistor region, and a non-volatile memory region;
forming a first oxide layer over the surface of the substrate;
etching the first oxide layer from the second low voltage transistor region;
forming a second oxide layer over the surface of the substrate;
implanting first well regions through the first and second oxide layers in the high voltage transistor region, the first low voltage transistor region, and the non-volatile region;
implanting a second well region through the second oxide layer in the second low voltage transistor region, wherein implanting the first well regions and second well region occurs concurrently;
selectively etching the first and second oxide layers from the non-volatile memory region, and the first and second low voltage regions;
forming a third oxide layer over the surface of the substrate; and
forming a transistor gate electrode in each of the high voltage transistor region, the first low voltage transistor region, the second low voltage transistor region, and the non-volatile memory region.
2. The method of claim 1 , further comprising forming extension implants in the non-volatile memory region, the high voltage transistor region, and the first and second low voltage transistor regions.
3. The method of claim 2 , wherein forming extension implants in the first and second low voltage transistor regions further comprises forming the extension implants in the first and second low voltage transistor regions using a same implant dopant.
4. The method of claim 1 , wherein implanting the first and second well regions further comprises implanting the first and second well regions in the first and second low voltage transistor regions using a same implant dopant.
5. The method of claim 4 , wherein implanting the first and second well regions further comprises implanting different implant dopants in the non-volatile memory region and the high voltage transistor region than the first and second low voltage transistor regions.
6. The method of claim 1 , wherein the third oxide layer is used as a gate dielectric for the non-volatile memory region and for transistors in the first and second low voltage transistor regions.
7. The method of claim 1 , wherein a transistor formed in the first low voltage transistor region has a different threshold voltage than a transistor formed in the second low voltage transistor region.
8. The method of claim 1 , wherein implanting the first and second well regions further comprises implanting the first and second well regions within a deep well region.
9. The method of claim 1 , wherein forming the first oxide layer, forming the second oxide layer, and forming the third oxide layer further comprises forming a gate oxide of the high voltage transistor region using the first, second, and third oxide layers.
10. The method of claim 1 , wherein the first and second low voltage transistor regions are further characterized as first and second supra low voltage transistor regions, wherein a threshold voltage of a transistor in the first and second supra low voltage transistor regions are lower than a threshold voltage of a transistor of the high voltage transistor region and higher than a threshold voltage of a transistor of a third low voltage transistor region.
11. A method for making a semiconductor device, the method comprising:
forming trench isolation regions in a surface of a substrate to delineate a high voltage transistor region, a first low voltage transistor region, a second low voltage transistor region, a third low voltage transistor region, and a non-volatile memory region;
growing a first oxide layer over the surface of the substrate;
etching the first oxide layer from the second low voltage transistor region;
growing a second oxide layer over the surface of the substrate;
implanting first well regions through the first and second oxide layers in the high voltage transistor region, the first low voltage transistor region, and the non-volatile region;
implanting a second well region through the second oxide layer in the second low voltage transistor region, wherein implanting the first well regions and second well region occurs concurrently;
selectively etching the first and second oxide layers from the non-volatile memory region, and the first and second low voltage regions;
growing a third oxide layer over the surface of the substrate;
etching the first, second, and third oxide layers from over the third low voltage transistor region;
growing a fourth oxide layer over the surface of the substrate; and
forming a transistor gate electrode in each of the high voltage transistor region, the first low voltage transistor region, the second low voltage transistor region, the third low voltage transistor region, and the non-volatile memory region.
12. The method of claim 11 , wherein implanting the first and second well regions further comprises implanting the first, second, and third low voltage transistor regions with a same implant dopant.
13. The method of claim 11 , further comprising implanting source/drain extensions in the first, second, and third low voltage transistor regions using a same implant dopant.
14. The method of claim 11 , wherein the first and second low voltage transistor regions are further characterized as first and second supra low voltage transistor regions, wherein a threshold voltage of a transistor in the first and second supra low voltage transistor regions are lower than a threshold voltage of a transistor of the high voltage transistor region and higher than a threshold voltage of a transistor of the third low voltage transistor region.
15. The method of claim 11 , wherein forming trench isolation regions further comprises delineating a dual gate transistor region, wherein transistors of the dual gate transistor region have a gate dielectric comprising the second, third, and fourth oxide layers.
16. The method of claim 11 , wherein a transistor of each of the first and second low voltage transistor regions and the non-volatile memory region have a gate dielectric formed from the third and fourth oxide layer.
17. The method of claim 11 , wherein selectively etching the first and second oxide layers from the non-volatile memory region, and the first and second low voltage regions further comprises selectively etching the first and second oxide layers using a same photomask.
18. The method of claim 11 , further comprising patterning a gate electrode for each of the high voltage transistor region, first, second, and third low voltage transistor regions, and the dual gate transistor region using a same photomask.