Semiconductor device including fully-silicided liner extending over a contact plug and insulating layer
Disclosed herein is a device that includes a substrate, a contact plug disposed on the substrate, an interlayer dielectric over the substrate to define the contact plug, a titanium silicide extending continuously from an upper portion of the contact plug to over the interlayer dielectric, a conductive material disposed over the titanium silicide.
1. A device comprising:
a substrate;
a contact plug disposed on the substrate and being a bit contact;
an interlayer dielectric over the substrate to define the contact plug;
wherein the contact plug comprises:
a bottom portion facing to the substrate;
a side portion being adjacent to the interlayer dielectric;
a metal silicide comprising a cup shape that extends along the bottom and the side portions of the contact plug, the metal silicide along the bottom of the contact plug being against a diffusion region of the substrate;
a metal nitride liner covering an inner surface of the cup shape of the metal silicide; and
a metal plug disposed in an inner portion of the metal nitride liner;
a bit line which includes titanium silicide extending continuously from an upper portion of the contact plug to over the interlayer dielectric, the titanium silicide of the bit line being over and in contact with each of the metal silicide, the metal nitride liner, and the metal plug of the contact plug; and
a conductive material disposed over the titanium silicide.
2. The device according to claim 1 , further comprising silicon layer between the metal silicide and the interlayer dielectric.
3. The device according to claim 1 , further comprising:
a groove being located in the substrate; and
a word line disposed in a lower portion of the groove, wherein the interlayer dielectric is disposed in an upper portion of the groove and protrudes from an upper surface of the substrate.
4. The device according to claim 3 , further comprising:
an isolation region in the substrate;
an active region surrounded by the isolation region in the substrate; and
an additional groove prolonging in parallel with the groove, the groove and the additional groove each intersecting the active region and each extending continuously from the active region to the isolation region.
5. The device according to claim 4 , wherein the word line extends continuously from the active region to the isolation region.
6. The device according to claim 5 , further comprising:
a field insulator covering the isolation region;
a cell gate insulator covering an inner surface of the groove and extending continuously from the active region to the isolation region, the word, line covering the cell gate insulator.
7. A device comprising:
a substrate;
a bit line over the substrate and comprising titanium silicide; wherein the titanium silicide of the bit line comprises a first portion being located on a first conductive material that is in contact with the substrate, and comprises a second portion being located on an interlayer dielectric that is adjacent to the first conductive material; and
wherein the first conductive material is a bit contact and comprises:
a bottom portion facing the substrate;
a side portion being adjacent to the interlayer dielectric;
an additional metal silicide comprising a cup shape that surrounds the bottom and the side portions;
a metal nitride material covering an inner surface of the cup shape; and
a metal plug disposed in an inner portion of the metal nitride material, the titanium silicide of the bit line contacting each of the additional metal silicide, the metal nitride material, and the metal plug of the first conductive material.
8. A device comprising:
a substrate;
a first metal silicide comprising a cup shape including a bottom portion facing to the substrate;
an interlayer dielectric surrounding an outer surface of the first metal silicide;
a metal material disposed in an inner portion of the cup shape of the first metal silicide and being spaced from the first metal silicide by a metal nitride material, the first metal silicide, the metal nitride material and the metal material together being comprised by a bit contact; and
a bit line containing a second metal silicide extending continuously on and directly contacting each of the respective upper portions of the interlayer dielectric, the first metal silicide, the metal nitride material and the metal material.
9. The device according to claim 8 , wherein the first and second metal silicide each comprises one of an element in a group that consist of titanium, cobalt, nickel, and platinum.
10. The device according to claim 8 , further comprising silicon layer between the first metal silicide and the interlayer dielectric.