Advanced programming verification schemes for memory cells
A method for data storage includes receiving in a memory device data for storage in a group of memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.
1. An apparatus, comprising:
a plurality of data storage cells; and
circuitry configured to:
receive data for storage in a group of the plurality of data storage cells;
store the data in the group of the plurality of data storage cells;
determine a number of erased data storage cells included in the group of the plurality of data storage cells following the storage of the data in the group of the plurality of data storage cells; and
report an error indicative of double programming the group of the plurality of memory cells in response to a determination that the number of erased data storage cells included in the group of the plurality of data storage cells is less than a threshold value.
2. The apparatus of claim 1 , wherein to store the data in the group of the plurality of data storage cells, the circuitry is further configured to:
apply a sequence of programming pulses to each data storage cell in the group of the plurality of data storage cells; and
compare values stored in each data storage cell in the group of the plurality of data storage cells to respective verification threshold values.
3. The apparatus of claim 1 , wherein to determine the number of erased data storage cells included in the group of the plurality of data storage cells, the circuitry is further configured to perform a read operation on at least one data storage cell in the group of the plurality of data storage cells using an erase read threshold value.
4. The apparatus of claim 3 , wherein the erase read threshold value is zero volts.
5. The apparatus of claim 1 , wherein each data storage cell of the plurality of data storage cells comprises a multi-level data storage cell.
6. The apparatus of claim 5 , wherein to store the data in the group of the plurality of data storage cells, the circuitry is further configured to store a respective portion of the data in a Least Significant Bit of each data storage cell in the group of the plurality of data storage cells.
7. A method, comprising:
receiving data for storage in a group of a plurality of data storage cells included in a memory;
storing the data in the group of the plurality of data storage cells;
determining a number of erased data storage cells included in the group of the plurality of data storage cells following storing the data in the group of the plurality of data storage cells; and
reporting an error indicative of double programming the group of the plurality of memory cells in response to determining that the number of erased data storage cells included in the group of the plurality of data storage cells is less than a threshold value.
8. The method of claim 7 , wherein determining the number of erased data storage cells included in the group of the plurality of data storage cells comprises performing a read operation on at one least data storage cell in the group of the plurality of data storage cells using an erase read threshold value.
9. The method of claim 8 , wherein the erase read threshold value is zero volts.
10. The method of claim 7 , wherein storing the data in the group of the plurality of data storage cells comprises:
applying a sequence of programming pulses to each data storage cell in the group of the plurality of data storage cells; and
comparing values stored in each data storage cell in the group of the plurality of data storage cells to respective verification threshold values.
11. The method of claim 7 , wherein each data storage cell of the plurality of data storage cells comprises a multi-level data storage cell.
12. The method of claim 11 , wherein storing the data in the group of the plurality of data storage cells comprises storing a respective portion of the data in a Least Significant Bit of each data storage cell in the group of the plurality of data storage cells.
13. The method of claim 7 , further comprising reporting a programming success in response to determining that the number of erased data storage cells included in the group of the plurality of data storage cells is greater than or equal to the threshold value.
14. A system, comprising:
a memory device including a plurality of data storage cells; and
a controller coupled to the memory device, wherein the controller is configured to:
receive data for storage in a group of the plurality of data storage cells;
store the data in the group of the plurality of data storage cells;
determine a number of erased data storage cells included in the group of the plurality of data storage cells following the storage of the data in the group of the plurality of data storage cells; and
report an error indicative of double programming the group of the plurality of memory cells in response to a determination that the number of erased data storage cells included in the group of the plurality of data storage cells is less than a threshold value.
15. The system of claim 14 , wherein to store the data in the group of the plurality of data storage cells, the controller is further configured to:
apply a sequence of programming pulses to each data storage cell in the group of the plurality of data storage cells; and
compare values stored in each data storage cell in the group of the plurality of data storage cells to respective verification threshold values.
16. The system of claim 14 , wherein to determine the number of erased data storage cells included in the group of the plurality of data storage cells, the controller is further configured to perform a read operation on at one least data storage cell in the group of the plurality of data storage cells using an erase read threshold value.
17. The system of claim 16 , wherein the erase read threshold value is zero volts.
18. The system of claim 14 , wherein each data storage cell of the plurality of data storage cells comprises a multi-level data storage cell.
19. The system of claim 18 , wherein to store the data in the group of the plurality of data storage cells, the controller is further configured to store a respective portion of the data in a Least Significant Bit of each data storage cell in the group of the plurality of data storage cells.
20. The system of claim 14 , wherein the controller is further configured to report a programming success in response to a determination that the number of erased data storage cells included in the group of the plurality of data storage cells is greater than or equal to the threshold value.