Semiconductor device with fin and related methods

1. A semiconductor device comprising:

a substrate;

at least one fin above said substrate and having a channel region therein;

diamond shaped source and drain regions adjacent the channel region to generate shear and normal strain on the channel region;

said channel region having a longitudinal axis extending between said diamond shaped source and drain regions;

said diamond shaped source and drain regions having sides at oblique angles to the longitudinal axis to generate the shear strain on the channel region; and

a gate over the channel region.

2. The semiconductor device of claim 1 further comprising a dielectric layer between said substrate and said at least one fin.

3. The semiconductor device of claim 2 wherein said dielectric layer comprises silicon dioxide.

4. The semiconductor device of claim 1 wherein said substrate and said at least one fin each comprises silicon.

5. The semiconductor device of claim 1 wherein said diamond shaped source and drain regions each comprises silicon.

6. The semiconductor device of claim 1 wherein the shear strain is defined by the following formula:

E

Fin

=

D

Fin

2

;

and

wherein E fin is an extension of the shear strain in the channel region; and wherein D fin is a thickness of said at least one fin.

7. The semiconductor device of claim 1 wherein said diamond shaped source and drain regions have all sides at oblique angles to the longitudinal axis to generate the shear strain on the channel region.

8. A semiconductor device comprising:

a substrate;

at least one fin above said substrate and having a channel region therein;

source and drain regions adjacent the channel region; and

a gate over the channel region and having a longitudinal axis extending across said at least one fin;

said channel region having a longitudinal axis extending between said source and drain regions;

said at least one fin being canted with respect to said source and drain regions to generate shear and normal strain on the channel region;

said longitudinal axis of said channel region for said at least one fin being at an oblique angle to said longitudinal axis of said gate.

9. The semiconductor device of claim 8 wherein said at least one fin is canted at an angle in a range of 22.5-67.5 degrees with respect to said source and drain regions.

10. The semiconductor device of claim 8 wherein said at least one fin is canted at an angle in a range of 40-50 degrees with respect to said source and drain regions.

11. The semiconductor device of claim 8 further comprising a dielectric layer between said substrate and said at least one fin.

12. The semiconductor device of claim 11 wherein said dielectric layer comprises silicon dioxide.

13. The semiconductor device of claim 8 wherein said substrate and said at least one fin each comprises silicon.

14. The semiconductor device of claim 8 wherein said source and drain regions comprise silicon germanium.

15. A method making a semiconductor device comprising:

forming at least one fin above a substrate and having a channel region therein;

forming source and drain regions adjacent the channel region; and

forming a gate over the channel region and having a longitudinal axis extending across the at least one fin, the channel region having a longitudinal axis extending between the source and drain regions, the at least one fin being canted with respect to the source and drain regions to generate shear and normal strain on the channel region, the longitudinal axis of the channel region for the at least one fin being at an oblique angle to the longitudinal axis of the gate.

16. The method of claim 15 wherein the at least one fin is canted at an angle in a range of 22.5-67.5 degrees with respect to the source and drain regions.

17. The method of claim 15 wherein the at least one fin is canted at an angle in a range of 40-50 degrees with respect to the source and drain regions.