Substrate processing apparatus and semiconductor device manufacturing method

1. A method of manufacturing a semiconductor device, the method comprising:

performing a pre-process with respect to a substrate, on a surface of which a metal film is formed, such that a first film is formed on the metal film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas, which is not activated by plasma excitation; and

performing a formation process with respect to the substrate after the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas, which is activated by plasma excitation,

wherein supplying the second processing gas, which is not activated by plasma excitation, includes supplying the second processing gas via a first buffer chamber disposed at a space lateral to the substrate, and simultaneously supplying the second processing gas via a second buffer chamber disposed at a space lateral to the substrate,

wherein supplying the second processing gas, which is activated by plasma excitation, includes activating the second processing gas by plasma excitation by a first plasma generator in the first buffer chamber to be supplied, and simultaneously activating the second processing gas by plasma excitation by a second plasma generator in the second buffer chamber to be supplied,

wherein the first processing gas includes silicon and chlorine, and the second processing gas includes nitrogen, and

wherein performing the pre-process includes forming a reaction intermediate including metal, silicon and chlorine by supplying the first processing gas, and supplying the second processing gas, which is not activated by plasma excitation, so as to react with the reaction intermediate such that chlorine is removed.

2. The method according to claim 1 , wherein, in the pre-process and the formation process, the substrate is heated to a temperature that is equal to or less than a self-decomposition temperature of the first processing gas.

3. The method according to claim 1 , wherein the metal film comprises at least one selected from the group consisting of Ti, TiN, TiSi, W, WN, WSi, Co, CoSi, Al, AlSi, Cu, and alloys thereof.

4. The method according to claim 1 , wherein the metal film comprises at least one selected from the group consisting of Ti, TiN, TiSi, W, WN, WSi, Co, CoSi, Al, AlSi, and alloys thereof.

5. The method according to claim 1 , wherein

supplying the second processing gas, which is activated by plasma excitation, includes respectively applying one-half of a RF power to the first plasma generator and to the second plasma generator, the RF power being required in a case in which activating the second processing gas by plasma excitation to be supplied is executed using a single plasma generator.

6. The method according to claim 1 , wherein the first buffer chamber and the second buffer chamber are disposed symmetrically with respect to a line passing through the center of the substrate.

7. The method according to claim 1 , wherein the first buffer chamber and the second buffer chamber are disposed at positions different by 180° to each other with respect to a line passing through the center of the substrate interposed therebetween.

8. A method of manufacturing a semiconductor device, the method comprising:

performing a pre-process with respect to a substrate, on a surface of which a metal film is formed, such that a first film is formed on the metal film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas, which is not activated by plasma excitation; and

performing a formation process with respect to the substrate after the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas, which is activated by plasma excitation,

wherein supplying the second processing gas, which is not activated by plasma excitation, includes supplying the second processing gas via a first buffer chamber disposed at a space lateral to the substrate, and simultaneously supplying the second processing gas via a second buffer chamber disposed at a space lateral to the substrate,

wherein supplying the second processing gas, which is activated by plasma excitation, includes activating the second processing gas by plasma excitation by a first plasma generator in the first buffer chamber to be supplied, and simultaneously activating the second processing gas by plasma excitation by a second plasma generator in the second buffer chamber to be supplied, and

wherein:

the first processing gas is dichlorosilane,

the second processing gas is ammonia, and

performing the pre-process includes forming a reaction intermediate including metal, silicon and chlorine by supplying the first processing gas, and supplying the second processing gas, which is not activated by plasma excitation, so as to react to the reaction intermediate such that silicide and ammonium chloride are formed and chlorine is removed.