IP Library Granted Patent US 10,610,822
Granted Patent B2
US 10,610,822 · App. 14/667,749 · Granted Apr 7, 2020

Preparation of asymmetric porous materials

Inventor: Eric N. Coker (Albuquerque, NM)
Assignee: National Technology & Engineering Solutions of Sandia, LLC
B01D53/228B01D67/0051B01D67/0083B01D67/0086B01D71/028B29C44/56B29C67/202B82Y30/00B01D2325/022Y10T428/24997Y10T428/249969Y10T428/249978
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,610,822
App. No.
14/667,749
Granted
Apr 7, 2020
Kind
B2
Abstract

As asymmetric porous film structure formed by depositing a porous material film on a flexible substrate, and applying an anisotropic stress to the porous media on the flexible substrate, where the anisotropic stress results from a stress such as an applied mechanical force, a thermal gradient, and an applied voltage, to form an asymmetric porous material.

Claims (13)

1. A porous film structure, comprising:

a post-stressed, relaxed substrate comprising one of a piezoelectric material, a glass material, a Si material, a metal, or a shape memory alloy;

an anisotropically-stressed microporous film upon and in contact with the post-stressed, relaxed substrate;

wherein said anisotropically-stressed microporous film comprises a plurality of asymmetric pores; and

wherein the porous film structure is formed by a process comprising:

applying an anisotropic stress to a substrate, said anisotropic stress being applied by applying a mechanical force, a thermal stress, or a voltage to said substrate:

depositing a microporous film on a surface of the anisotropically-stressed substrate;

and removing the applied anisotropic stress from the substrate, thereby forming the post-stressed, relaxed substrate, anisotropically stressing the microporous film, and forming the plurality of asymmetric pores within the microporous film.

2. The structure of claim 1 , wherein the porous film has a thickness between approximately 10 nm and 100 nm.

3. The structure of claim 1 , wherein said piezoelectric material is aluminum nitride.

4. The structure of claim 1 wherein said microporous film comprises a material selected from the group consisting of silica, alumina, aluminosilicate, titania, an organic material, and an organic-inorganic hybrid material.

5. The structure of claim 1 wherein said microporous film comprises a zeolite.

6. The structure of claim 1 , wherein the asymmetric pore structure comprises asymmetric chiral pores.

Assignments (2)
CHANGE OF NAME Recorded Nov 26, 2019
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 051116/0138 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2015
From: COKER, ERIC N.
To: SANDIA CORPORATION
Reel/Frame 035248/0872 →
Continuity (4)
Continuation 13538527 · Jun 29, 2012
Continuation 12511095 · Jul 29, 2009
Continuation In Part 11501199 · Aug 8, 2006
Related Publication 20150196872A1 · Jul 16, 2015