IP Library › Patent Application 14668192
Patent Application
App. No. 14/668,192

HIGH PRESSURE SINGLE CRYSTAL DIAMOND ANVILS

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Quick Facts
Patent No.
US None
App. No.
14/668,192
Abstract

A high pressure anvil is provided. The high pressure anvil includes a two-strata body including a first body grown by chemical vapor deposition and a second layer grown by an epitaxy deposition method.

Claims (1)

1 . A high pressure anvil comprising a two-strata body including a first body grown by chemical vapor deposition and a second layer grown by an epitaxy deposition method.

Assignments (2)
SECURITY INTEREST Recorded Oct 10, 2023
From: WD ADVANCED MATERIALS, LLC
To: TREE LINE CAPITAL PARTNERS, LLC, AS COLLATERAL AGENT
Reel/Frame 065175/0286 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2018
From: BOEHLER, REINHARD; TSACH, YARDEN
To: M7D CORPORATION
Reel/Frame 045299/0890 →