IP Library Granted Patent US 9,599,892
Granted Patent B2
US 9,599,892 · App. 14/668,335 · Granted Mar 21, 2017

Composition for pattern formation, and pattern-forming method

Inventors: Hiroyuki Komatsu (Tokyo, JP); Takehiko Naruoka (Tokyo, JP); Shinya Minegishi (Tokyo, JP); Tomoki Nagai (Tokyo, JP)
Assignee: JSR CORPORATION
G03F7/0002C08F297/026C08K5/42G03F7/0035G03F7/2041G03F7/322G03F7/36G03F7/38G03F7/40H01L21/0271H01L21/0274H01L21/31133H01L21/31138C08L53/00
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Quick Facts
Patent No.
US 9,599,892
App. No.
14/668,335
Granted
Mar 21, 2017
Kind
B2
Abstract

A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

Claims (27)

1. A pattern-forming method comprising:

applying a pattern-forming composition directly or indirectly on a substrate to provide a directed self-assembling film, the directed self-assembling film comprising a phase separation structure which comprises a plurality of phases; and

removing a part of the plurality of phases of the directed self-assembling film,

wherein the pattern-forming composition comprises:

a block copolymer comprising an end group comprising a reactive group on at least one end of a main chain of the block copolymer; and

a solvent, and

wherein the reactive group is an ethylenic carbon-carbon double bond-containing group, a carbon-carbon triple bond-containing group, an oxetanyl group, or a combination thereof.

2. The pattern-forming method according to claim 1 , further comprising heating during or after providing the directed self-assembling film.

3. The pattern-forming method according to claim 1 ,

further comprising before providing the directed self-assembling film:

providing an underlayer film on the substrate; and

forming a prepattern on the underlayer film such that a region which is compartmentalized by the prepattern is formed on the underlayer film, wherein

in providing the directed self-assembling film, the directed self-assembling film is provided on the region.

4. The pattern-forming method according to claim 3 , wherein at least one of the underlayer film and the prepattern comprises on a surface thereof, a group capable of reacting with the reactive group.

5. The pattern-forming method according to claim 1 , wherein the pattern obtained is a line-and-space pattern or a hole pattern.

6. The pattern-forming method according to claim 1 , wherein the block copolymer is obtained by using as a polymerization terminator of block copolymerization, a compound comprising the reactive group and a carbon-halogen bond.

7. The pattern-forming method according to claim 1 , wherein the end group is attached to the block copolymer on only one end of the block copolymer.

8. The pattern-forming method according to claim 1 , wherein the block copolymer comprises a poly((meth)acrylic acid ester) block comprising a (meth)acrylic acid ester unit.

9. The pattern-forming method according to claim 8 , wherein the block copolymer further comprises a polystyryl derivative block comprising a styryl derivative unit.

10. The pattern-forming method according to claim 1 , wherein the block copolymer is a diblock polymer or a triblock polymer.

11. The pattern-forming method according to claim 1 , wherein the pattern-forming composition further comprises a reaction accelerator or a crosslinkable compound.

12. The pattern-forming method according to claim 1 , wherein the end group is a group obtained by binding the reactive group to a divalent organic group.

13. The pattern-forming method according to claim 12 , wherein the divalent organic group is a substituted or unsubstituted divalent hydrocarbon group, or a group comprising a hetero atom-containing group between two carbon atoms of the substituted or unsubstituted divalent hydrocarbon group.

14. The pattern-forming method according to claim 13 , wherein the hetero atom-containing group is —SO—, —SO 2 —, —SO 2 O—, —SO 3 —, —CO—, —COO—, —COS—, —CONH—, —OCOO—, —OCOS—, —OCONH—, —SCONH—, or —SCSNH—.

15. The pattern-forming method according to claim 12 , wherein the divalent organic group is a divalent hydrocarbon group which is unsubstituted or substituted with a halogen atom, a hydroxy group, a carboxy group, a nitro group or a cyano group, or a group comprising a hetero atom-containing group between two carbon atoms of the divalent hydrocarbon group.

16. The pattern-forming method according to claim 15 , wherein the hetero atom-containing group is —SO—, —SO 2 —, —SO 2 O—, —SO 3 —, —CO—, —COO—, —COS—, —CONH—, —OCOO—, —OCOS—, —OCONH—, —SCONH—, or —SCSNH—.

17. The pattern-forming method according to claim 1 , wherein the reactive group is a vinyl group, a vinyl ether group, an oxetanyl group, or a combination thereof.

Assignments (3)
MERGER Recorded Mar 23, 2026
From: JSR CORPORATION
To: JICC-02, CO., LTD
Reel/Frame 075191/0149 →
CHANGE OF NAME Recorded Mar 23, 2026
From: JICC-02 CO., LTD
To: JSR CORPORATION
Reel/Frame 075192/0023 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2015
From: KOMATSU, HIROYUKI; NARUOKA, TAKEHIKO; MINEGISHI, SHINYA; NAGAI, TOMOKI
To: JSR CORPORATION
Reel/Frame 035254/0639 →
Priority Claims (1)
JP 2014-070198 · Mar 28, 2014 · national
Continuity (1)
Related Publication 20150277223A1 · Oct 1, 2015