Substrate processing apparatus

1. A substrate processing apparatus comprising:

a processing chamber configured to house a substrate;

a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber;

a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber;

a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber; and

a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by alternately performing the following processes one or more times:

the process of supplying one of the sources of the chlorosilane-based source or the aminosilane-based source to the substrate in the processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon, and

the process of supplying the reactive gas to the substrate, to modify the first layer and form a second layer.

2. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon carbonitride layer or a silicon nitride layer is formed as the second layer by supplying a thermally or plasma activated nitrogen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon carbonitride film or a silicon nitride film is formed as the insulating film.

3. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon carbonitride layer is formed as the second layer by supplying a thermally activated nitrogen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon carbonitride film is formed as the insulating film.

4. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon nitride layer is formed as the second layer by supplying a plasma activated nitrogen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon nitride film is formed as the insulating film.

5. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon carbonitride layer is formed as the second layer by supplying a thermally activated carbon-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon carbonitride film is formed as the insulating film.

6. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon oxycarbonitride layer, a silicon oxycarbide layer, or a silicon oxide layer is formed as the second layer by supplying a thermally or plasma activated oxygen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon oxycarbonitride film, a silicon oxycarbide film, or a silicon oxide film is formed as the insulating film.

7. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon oxycarbonitride layer or a silicon oxycarbide layer is formed as the second layer by supplying a thermally activated oxygen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon oxycarbonitride film or a silicon oxycarbide film is formed as the insulating film.

8. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon oxide layer or a silicon oxycarbide layer is formed as the second layer by supplying a plasma activated oxygen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon oxide film or a silicon oxycarbide film is formed as the insulating film.

9. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon boron carbonitride layer is formed as the second layer by supplying a thermally activated boron-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon boron carbonitride film is formed as the insulating film.

10. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon carbonitride layer is formed as the second layer, by supplying a thermally activated carbon-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated nitrogen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon carbonitride film is formed as the insulating film.

11. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon oxycarbonitride layer is formed as the second layer by supplying a thermally activated carbon-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated oxygen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon oxycarbonitride film is formed as the insulating film.

12. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon boron carbonitride layer is formed as the second layer by supplying a thermally activated boron-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated nitrogen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon boron carbonitride film is formed as the insulating film.

13. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon oxycarbonitride layer is formed as the second layer, by supplying a thermally activated nitrogen-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated oxygen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon oxycarbonitride film is formed as the insulating film.

14. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon oxycarbonitride layer is formed as the second layer by supplying a thermally activated carbon-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated nitrogen-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated oxygen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon oxycarbonitride film is formed as the insulating film.

15. The substrate processing apparatus of claim 1 ,

wherein the controller is configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that

in the process of forming the second layer, a silicon boron carbonitride layer is formed as the second layer by supplying a thermally activated carbon-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated boron-containing gas to the substrate as the reactive gas, and thereafter supplying a thermally activated nitrogen-containing gas to the substrate as the reactive gas, and

in the process of forming the insulating film, a silicon boron carbonitride film is formed as the insulating film.