Method for manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Provided is a technique capable of suppressing a product substrate from being contaminated with a contaminant generated in a process chamber. The method includes (a) processing a substrate supported by a first substrate support by generating plasma in a first plasma generating region in a process chamber; and (b) removing a metal substance in the process chamber by generating plasma in the first plasma generating region and a second plasma generating region disposed between the first substrate support and a back surface of a substrate supported by a second substrate support.
1. A method of manufacturing a semiconductor device, comprising:
(a) processing a first substrate placed on a top surface of a susceptor by generating plasma in a first plasma generating region in a process chamber; and
(b) removing a metal substance from the susceptor by generating plasma in the first plasma generating region and a second plasma generating region with a second substrate disposed above the top surface of the susceptor such that the metal substance is adhered to a back surface of the second substrate, wherein the second substrate is different from the first substrate, and the second plasma generating region is defined by the back surface of the second substrate and the top surface of the susceptor between the second substrate and the susceptor.
2. The method of claim 1 , wherein (b) comprises:
(b-1) supplying at least one gas selected from the group consisting of a hydrogen-containing gas and an oxygen-containing gas into the process chamber;
(b-2) exciting the at least one gas supplied into the process chamber; and
(b-3) exhausting an inside of the process chamber.
3. The method of claim 2 , wherein (b-1), (b-2) and (b-3) are repeatedly performed a predetermined number of times in (b).
4. The method of claim 2 , wherein the hydrogen-containing gas and the oxygen-containing gas are alternately excited in (b-2).
5. The method of claim 4 , wherein a purge step is performed between excitation of the hydrogen-containing gas and excitation of the oxygen-containing gas.
6. The method of claim 1 , wherein a distance between the top surface of the susceptor and the back surface of the second substrate disposed above the top surface of the susceptor ranges from 0.5 mm to 30 mm.
7. The method of claim 1 , wherein plasma is generated at a front surface side of the first substrate in (a), and
plasma is generated at a front surface side of the second substrate and at a back surface side of the second substrate in (b).
8. The method of claim 1 , wherein the susceptor comprises a substrate placement unit supporting the first substrate.
9. The method of claim 1 , wherein the susceptor is made of non-metal material.
10. A non-transitory computer-readable recording medium causing a computer to perform:
(a) processing a first substrate placed on a top surface of a susceptor by generating plasma in a first plasma generating region in a process chamber; and
(b) removing a metal substance from the susceptor by generating plasma in the first plasma generating region and a second plasma generating region with a second substrate disposed above the top surface of the susceptor such that the metal substance is adhered to a back surface of the second substrate, wherein the second substrate is different from the first substrate, and the second plasma generating region is defined by the back surface of the second substrate and the top surface of the susceptor between the second substrate and the susceptor.
11. The non-transitory computer-readable recording medium of claim 10 , wherein (b) comprises:
(b-1) supplying at least one gas selected from the group consisting of a hydrogen-containing gas and an oxygen-containing gas into the process chamber;
(b-2) exciting the at least one gas supplied into the process chamber; and
(b-3) exhausting an inside of the process chamber.
12. The non-transitory computer-readable recording medium of claim 11 , wherein (b-1), (b-2) and (b-3) are repeatedly performed a predetermined number of times in (b).
13. The non-transitory computer-readable recording medium of claim 11 , wherein the hydrogen-containing gas and the oxygen-containing gas are alternately excited in (b-2).
14. The non-transitory computer-readable recording medium of claim 13 , wherein a purge sequence is performed between excitation of the hydrogen-containing gas and excitation of the oxygen-containing gas.
15. The non-transitory computer-readable recording medium of claim 10 , wherein a distance between the top surface of the susceptor and the back surface of the second substrate disposed above the top surface of the susceptor ranges from 0.5 mm to 30 mm.
16. The non-transitory computer-readable recording medium of claim 10 , wherein the susceptor comprises a substrate placement unit supporting the first substrate.