Fin trimming in a double sit process

1. A method of forming a semiconductor structure, the method comprising:

forming a plurality of fins from a layer of semiconductor material, wherein at least one first fin of the plurality of fins is at least fifty percent wider than each second fin of a group of second fins included in the plurality of fins, and wherein the width of the at least one first fin is substantially similar to the combined widths of a pair of first spacers and a first mandrel located between the pair of first spacers used to pattern the at least one first fin; and

forming a space between at least two second fins of the group of second fins by selectively removing the at least one first fin such that only the group of second fins remain in the plurality of fins, wherein the space is (i) void of fins and (ii) is greater than the width of the at least one first fin.

2. The method of claim 1 , wherein forming a plurality of fins from a layer of semiconductor material further includes:

forming mandrels on a semiconductor substrate;

forming spacers on sidewalls of the mandrels; and

forming the plurality of fins by patterning according to at least some of the mandrels and the spacers, wherein the mandrels and the spacers overlay portions of the semiconductor substrate.

3. The method of claim 2 , the method further including:

using a portion of first block mask material to cover the pair of first spacers and the first mandrel located between the pair of first spacers, wherein the pair of first spacers and the first mandrel cover a first region of the semiconductor material from which the at least one first fin will be formed; and

forming a pattern for the group of second fins by removing at least one second mandrel between the plurality of second spacers, wherein the at least one second mandrel is in a region that is not covered by the portion of first block mask material, and wherein the plurality of second spacers cover segments of a second region of the semiconductor material from which the group of second fins will be formed.

4. The method of claim 3 , the method further including:

removing the portion of first block mask material after the at least one second mandrel has been removed.

5. The method of claim 3 , the method further including:

performing reactive ion etching (RIE) (i) to form the group of second fins by patterning in a second region of the semiconductor material using the plurality of second spacers, and (ii) to form the at least one first fin in a first region of the semiconductor material that is covered by the pair of first spacers and the mandrel located between the pair of first spacers.

6. The method of claim 1 , wherein forming a plurality of fins from a layer of semiconductor material further includes:

depositing a first layer of hard-mask material to cover the plurality of fins.

7. The method of claim 6 , the method further including:

creating at least one portion of second block mask material over the first layer of hard-mask material; and

applying reactive ion etching (RIE) to form an opening through the layer of first hard-mask material that is not covered by the at least one portion of second block mask material to expose a portion of the at least one first fin while the group of second fins remain covered by the first layer of hard-mask material.

8. The method of claim 7 , the method further including:

etching to remove the at least one first fin.

9. The method of claim 7 , the method further including:

removing the at least one portion of second block mask material.

10. The method of claim 9 , the method further including:

etching to remove the first layer of hard-mask material.

11. A method of forming a semiconductor structure, the method comprising:

selectively removing at least one first fin from a plurality of fins such that only a group of second fins remain in the plurality of fins, wherein the at least one first fin of the plurality of fins is at least fifty percent wider than each fin of the group of second fins, wherein the width of the at least one first fin is substantially similar to the combined widths of a pair of first spacers and a first mandrel located between the pair of first spacers used to pattern the at least one first fin and wherein selectively removing the at least one fin comprises:

applying one or both of a first portion of block mask material and a layer of hard-mask material that cover the at least one first fin and the group of second fins;

forming an opening through one or both of the first portion of block mask material and the layer of hard-mask material such that a portion of at least one first fin is exposed while the group of second fins remain covered by one or both of the first portion of block mask material and the layer of hard-mask material; and

forming a space between at least two second fins of the group of second fins by selectively etching to remove the at least one first fin such that the space is (i) void of fins and (ii) is greater than the width of the at least one first fin.

12. The method of claim 11 , the method further including:

forming the plurality of fins from a layer of semiconductor material, wherein the at least one first fin of the plurality of fins is at least fifty percent wider than each second fin of the group of second fins included in the plurality of fins.

13. The method of claim 11 , wherein forming a plurality of fins from a layer of semiconductor material further includes:

forming mandrels on a semiconductor substrate;

forming spacers on sidewalls of the mandrels; and

forming the plurality of fins by patterning according to at least some of the mandrels and the spacers, wherein the mandrels and the spacers overlay portions of the semiconductor substrate.

14. The method of claim 13 , the method further including:

using a second portion of block mask material to cover the pair of first spacers and a first mandrel located between the pair of first spacers, wherein the pair of first spacers and the first mandrel cover one or more mandrels in a first region of the semiconductor material where the at least one first fin will be formed;

forming a pattern for the group of second fins by removing at least one second mandrel between a plurality of second spacers, wherein the at least one second mandrel is in a region that is not covered by the portion of first block mask material, and wherein the plurality of second spacers cover segments of a second region of the semiconductor material from which the group of second fins will be formed, and

removing the second portion of block mask material after the at least one second mandrel has been removed.

15. The method of claim 14 , the method further including:

performing reactive ion etching (RIE) to form the group of second fins in a region that is not covered by the second portion of block mask material and to form the at least one first fin in the region that is covered by the portion of block mask material

performing reactive ion etching (RIE) (i) to form the group of second fins by patterning the second region of the semiconductor material using the plurality of second spacers, and (ii) to form the at least one first fin in a first region of the semiconductor material that is covered by the pair of first spacers and the mandrel located between the pair of first spacers.

16. The method of claim 11 , wherein forming a plurality of fins from a layer of semiconductor material further includes:

depositing the layer of hard-mask material to cover the plurality of fins.

17. The method of claim 11 , the method further including:

forming an opening through the first portion of block mask material by etching to remove at least a portion of the first portion of block mask material, wherein a shape of the opening through the first portion of block mask material controls formation of the opening through the layer of hard-mask material.

18. The method of claim 11 , the method further including:

etching to remove at least a portion of the layer of hard-mask material after the at least one first fin is removed.