Materials and components in phase change memory devices
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm·cm.
1. A phase change memory structure, comprising:
a phase change material of a memory cell;
an electrode material forming an Ohmic contact with the phase change material; and
a dopant dispersed within the electrode material that provides the electrode material with a resistivity of from about 10 to about 100 mOhm·cm, wherein the electrode material is a member selected from the group consisting of: amorphous carbon, tungsten silicide (WSi), and silicon carbide (SiC).
2. The memory structure of claim 1 , wherein the doped electrode material has a resistivity of from about 10 to about 100 mOhm·cm as formed.
3. The memory structure of claim 1 , wherein the doped electrode material has a resistivity of from about 10 to about 100 mOhm·cm when measured at a temperature of about 20° C. and a temperature of about 600° C.
4. The memory structure of claim 1 , wherein the doped electrode has a resistivity of from about 10 to about 100 mOhm·cm following a 3 hour 400° C. anneal.
5. The memory structure of claim 1 , wherein the doped electrode has a resistivity of from about 10 to about 100 mOhm·cm following at least 1000 write and erase cycles.
6. The memory structure of claim 1 , wherein the electrode material is amorphous carbon and the dopant is silicon.
7. The memory structure of claim 6 , wherein the silicon is doped in the amorphous carbon from about 5 at % to about 10 at %.
8. The memory structure of claim 1 , wherein the electrode material is tungsten silicide and the dopant is nitrogen.
9. The memory structure of claim 8 , wherein the electrode material has an at % tungsten to silicon ratio of from about 1:3 to about 1:5.
10. The memory structure of claim 1 , wherein the electrode material is a silicon carbide material and the dopant is tungsten.
11. The memory structure of claim 10 , wherein silicon is present in the silicon carbide material at a concentration of up to about 95 at %.
12. The memory structure of claim 10 , wherein the silicon carbide material has an at % silicon to carbon ratio of from about 1:1 to about 1:9.
13. The memory structure of claim 10 , wherein the tungsten is doped in the silicon carbide material up to about 20 at %.
14. A phase change memory cell, comprising:
a stack structure including:
a first electrode;
a second electrode;
a phase change material disposed between and forming Ohmic contacts with the first electrode and the second electrode;
a third electrode; and
a select device material disposed between the third electrode and the second electrode;
wherein at least the first and second electrodes includes an electrode material doped to have a resistivity of from about 10 to about 100 mOhm·cm, wherein the doped electrode material is amorphous carbon doped with silicon, tungsten silicide doped with nitrogen, or silicon carbide doped with tungeston.