Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Provided a method including forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained. The cycle includes: (a) forming the first film by performing a first set a predetermined number of times, wherein the first set includes supplying a first process gas and supplying a second process gas to the substrate; and (b) forming the second film by performing a second set a predetermined number of times, wherein the second set includes supplying a third process gas and supplying the fourth process gas to the substrate.
1. A method of manufacturing a semiconductor device, comprising forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained, the cycle comprising:
(a) forming a film free of the borazine ring structure and including boron and nitrogen or a film free of the borazine ring structure and including boron, carbon and nitrogen as the first film by performing a first set a predetermined number of times, wherein the first set comprises: supplying a first process gas free of the borazine ring structure and including boron to the substrate and supplying a second process gas including nitrogen or including nitrogen and carbon to the substrate; and
(b) forming a film having the borazine ring structure and including boron and nitrogen or a film having the borazine ring structure and including boron, carbon and nitrogen as the second film by performing a second set a predetermined number of times, wherein the second set comprises: supplying a third process gas to the substrate and supplying the fourth process gas having the borazine ring structure and an organic ligand to the substrate.
2. The method of claim 1 , wherein the first film is formed before the second film is formed in forming the laminated film.
3. The method of claim 1 , wherein an initial film formed in forming the laminated film is the first film.
4. The method of claim 3 , wherein a last film formed in forming the laminated film is the first film.
5. The method of claim 1 , wherein a last film formed in forming the laminated film is the first film.
6. The method of claim 1 , wherein (a) and (b) are alternately performed a plurality of times in forming the laminated film.
7. The method of claim 1 , wherein a thickness of each of the first film and the second film is equal to or less than 5 nm.
8. The method of claim 1 , wherein a thickness of each of the first film and the second film is equal to or less than 1 nm.
9. The method of claim 1 , wherein the laminated film comprises a nano-laminated film where the first film and the second film are laminated at nano-level.
10. The method of claim 1 , wherein the third process gas comprises at least one selected from the group consisting of a gas free of the borazine ring structure and including boron, a gas including nitrogen and a gas including nitrogen and carbon.
11. The method of claim 1 , wherein the third gas comprises a gas having a same chemical structure as that of one of the first gas or the second gas.
12. The method of claim 1 , wherein the third gas comprises a gas having a same chemical structure as that of the first gas.
13. The method of claim 1 , wherein each of the first gas and the third gas comprises a gas free of the borazine ring structure and including boron and a halogen element.