Method of manufacturing a semiconductor device by forming a film on a substrate
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer including the second layer and a discontinuous layer including a third element stacked on the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first element and the third element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate, wherein the first layer includes at least one of: a first discontinuous layer, a continuous layer, or a layer in which at least one of the first discontinuous layer or the continuous layer is overlapped,
(b) forming a second layer that includes the first layer and a second discontinuous layer that includes the second element stacked on the first layer, wherein the second discontinuous layer is formed by supplying a second gas that includes the second element to the substrate,
(c) forming a third layer that includes the second layer and a third discontinuous layer that includes the third element stacked on the second layer, wherein the third discontinuous layer is formed by supplying a third gas that includes the third element to the substrate, and
(d) forming a fourth layer that includes the first element, the second element, the third element and the fourth element by supplying a fourth gas that includes the fourth element to the substrate to modify the third layer under a condition that a modifying reaction of the third layer by the fourth gas is not saturated.
2. The method of claim 1 , wherein (b) includes forming the second layer exposing a portion of the first layer at a surface of the second layer.
3. The method of claim 1 , wherein a material decomposed from the second gas is chemically adsorbed on the first layer in a non-saturated manner in (b).
4. The method of claim 1 , wherein a material decomposed from the second gas is chemically adsorbed on the first layer to form a discontinuous chemical adsorption layer of the material on the first layer in (b).
5. The method of claim 1 , wherein a material decomposed from the third gas is chemically adsorbed on the second layer in a non-saturated manner in (c).
6. The method of claim 1 , wherein a material decomposed from the third gas is chemically adsorbed on the second layer to form a discontinuous chemical adsorption layer of the material on the second layer in (c).
7. The method of claim 1 , wherein a surface layer of the third layer is modified in (d).
8. The method of claim 1 , wherein only a surface layer of the third layer is modified in (d).
9. The method of claim 1 , wherein a portion of a surface layer of the third layer is modified in (d).
10. The method of claim 1 , wherein only a portion of a surface layer of the third layer is modified in (d).
11. The method of claim 1 ,
wherein the first element includes at least one of: a semiconductor element or a metal element,
wherein the second element includes at least one of: nitrogen, boron, carbon, oxygen, a semiconductor element, or a metal element,
wherein the third element includes at least one of: nitrogen, boron, carbon, oxygen, a semiconductor element, or a metal element, and
wherein the fourth element includes at least one of: nitrogen or oxygen.
12. The method of claim 1 ,
wherein the first element includes at least one of: silicon, boron, aluminum, or titanium,
wherein the second element includes at least one of: nitrogen, boron, carbon, oxygen, aluminum, or titanium,
wherein the third element includes at least one of: nitrogen, boron, carbon, oxygen, aluminum, or titanium, and
wherein the fourth element includes at least one of: nitrogen or oxygen.
13. The method of claim 1 ,
wherein the first element includes at least one of: silicon, aluminum, or titanium,
wherein the second element includes at least one of: boron, carbon, aluminum, or titanium,
wherein the third element includes at least one of: boron, carbon, aluminum, or titanium, and
wherein the fourth element includes at least one of: nitrogen or oxygen.
14. The method of claim 1 , wherein at least one of: the second gas, the third gas, or the fourth gas, is plasma-excited or thermally-excited and supplied to the substrate.
15. A substrate processing method, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first element and the third element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate, wherein the first layer includes at least one of: a first discontinuous layer, a continuous layer, or a layer in which at least one of the first discontinuous layer or the continuous layer is overlapped,
(b) forming a second layer that includes the first layer and a second discontinuous layer that includes the second element stacked on the first layer, wherein the second discontinuous layer is formed by supplying a second gas that includes the second element to the substrate,
(c) forming a third layer that includes the second layer and a third discontinuous layer that includes the third element stacked on the second layer, wherein the third discontinuous layer is formed by supplying a third gas that includes the third element to the substrate, and
(d) forming a fourth layer that includes the first element, the second element, the third element and the fourth element by supplying a fourth gas that includes the fourth element to the substrate to modify the third layer under a condition that a modifying reaction of the third layer by the fourth gas is not saturated.