Method of manufacturing semiconductor device by forming a film on a substrate
Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes a discontinuous chemical adsorption layer of a molecule of a first gas that includes the first element by supplying the first gas to the substrate under a condition that a chemical adsorption of the molecule on a surface of the substrate is not saturated, and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.
2. The method of claim 1 , wherein the first layer includes a non-saturated chemical adsorption layer.
3. The method of claim 1 , wherein the first layer has a thickness of less than one atomic layer.
4. The method of claim 1 , wherein a portion of a surface layer of the first layer is modified in (b).
5. The method of claim 1 , wherein only a portion of a surface layer of the first layer is modified in (b).
6. The method of claim 1 , wherein the second gas is plasma-excited or thermally-excited and supplied to the substrate in (b).
7. The method of claim 1 ,
wherein the first element includes at least one of a semiconductor element or a metal element, and
wherein the second element includes at least one of nitrogen, carbon, or oxygen.
8. The method of claim 1 ,
wherein the first element includes at least one of a semiconductor element or a metal element, and
wherein the second element includes nitrogen.
9. The method of claim 1 ,
wherein the first element includes at least one of a semiconductor element or a metal element, and
wherein the second element includes carbon.
10. The method of claim 1 ,
wherein the first element includes at least one of a semiconductor element or a metal element, and
wherein the second element includes oxygen.
11. The method of claim 1 ,
wherein the first element includes a metal element, and
wherein the second element includes nitrogen.
12. The method of claim 1 ,
wherein the first element includes a metal element, and
wherein the second element includes carbon.
13. The method of claim 1 ,
wherein the first element includes a metal element, and
wherein the second element includes oxygen.
14. The method of claim 1 ,
wherein the first element includes at least one of silicon, boron, aluminum, or titanium, and
wherein the second element includes at least one of nitrogen, carbon, or oxygen.
15. A substrate processing method, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes a discontinuous chemical adsorption layer of a molecule of a first gas that includes the first element by supplying the first gas to the substrate under a condition that a chemical adsorption of the molecule on a surface of the substrate is not saturated, and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.